A Hybrid Planar-Doped Potential-Well Barrier Diode for Detector Applications

Mise Akura, Geoffrey Dunn, Mohamed Missous

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This paper presents the principle of design and experimental demonstration of a prototype novel planar-doped potential-well barrier (PWB) diode concept that exploits the characteristics of both the PWB and planar-doped barrier (PDB) diodes. The highly doped (Be) sheet charge and potential well are inserted asymmetrically at nearly the same position within an intrinsic region to form a barrier. The hybrid device is designed so that the δ-doping is used to achieve a desirable minimum barrier height, while the active nature of charge in the potential well is used to enhance the device reverse bias performance. The diode achieved an ideality factor of 1.36 and corresponding voltage responsivity of 10900 V/W at 10 GHz. Diodes of this kind demonstrates promising RF signal detection and can be used in heterodyne applications. An estimated curvature coefficient of 21.2 V⁻¹ at a bias of 0.72 V and cut-off frequency of 47.4 GHz were realized. Results of simulation and experiment have shown excellent agreement and an improved asymmetric behavior in the I−V characteristics in comparison to an equivalent PDB diode.
Original languageEnglish
Pages (from-to)4031-4035
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume64
Issue number10
Early online date9 Aug 2017
DOIs
Publication statusPublished - Oct 2017

Fingerprint

Diodes
Detectors
Signal detection
Cutoff frequency
Demonstrations
Doping (additives)
Electric potential
Experiments

Keywords

  • Drift-Diffusion (DD)
  • orthophosphoric-based etch
  • potential barriers
  • responsivity
  • zero-bias detection

Cite this

A Hybrid Planar-Doped Potential-Well Barrier Diode for Detector Applications. / Akura, Mise; Dunn, Geoffrey; Missous, Mohamed.

In: IEEE Transactions on Electron Devices, Vol. 64, No. 10, 10.2017, p. 4031-4035.

Research output: Contribution to journalArticle

@article{3a5f60f463194c56a3a4e4f6176c573a,
title = "A Hybrid Planar-Doped Potential-Well Barrier Diode for Detector Applications",
abstract = "This paper presents the principle of design and experimental demonstration of a prototype novel planar-doped potential-well barrier (PWB) diode concept that exploits the characteristics of both the PWB and planar-doped barrier (PDB) diodes. The highly doped (Be) sheet charge and potential well are inserted asymmetrically at nearly the same position within an intrinsic region to form a barrier. The hybrid device is designed so that the δ-doping is used to achieve a desirable minimum barrier height, while the active nature of charge in the potential well is used to enhance the device reverse bias performance. The diode achieved an ideality factor of 1.36 and corresponding voltage responsivity of 10900 V/W at 10 GHz. Diodes of this kind demonstrates promising RF signal detection and can be used in heterodyne applications. An estimated curvature coefficient of 21.2 V⁻¹ at a bias of 0.72 V and cut-off frequency of 47.4 GHz were realized. Results of simulation and experiment have shown excellent agreement and an improved asymmetric behavior in the I−V characteristics in comparison to an equivalent PDB diode.",
keywords = "Drift-Diffusion (DD), orthophosphoric-based etch, potential barriers, responsivity, zero-bias detection",
author = "Mise Akura and Geoffrey Dunn and Mohamed Missous",
note = "This work was supported by Tertiary Education Tax Fund, Ministry of Education, Nigeria.",
year = "2017",
month = "10",
doi = "10.1109/TED.2017.2733724",
language = "English",
volume = "64",
pages = "4031--4035",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",

}

TY - JOUR

T1 - A Hybrid Planar-Doped Potential-Well Barrier Diode for Detector Applications

AU - Akura, Mise

AU - Dunn, Geoffrey

AU - Missous, Mohamed

N1 - This work was supported by Tertiary Education Tax Fund, Ministry of Education, Nigeria.

PY - 2017/10

Y1 - 2017/10

N2 - This paper presents the principle of design and experimental demonstration of a prototype novel planar-doped potential-well barrier (PWB) diode concept that exploits the characteristics of both the PWB and planar-doped barrier (PDB) diodes. The highly doped (Be) sheet charge and potential well are inserted asymmetrically at nearly the same position within an intrinsic region to form a barrier. The hybrid device is designed so that the δ-doping is used to achieve a desirable minimum barrier height, while the active nature of charge in the potential well is used to enhance the device reverse bias performance. The diode achieved an ideality factor of 1.36 and corresponding voltage responsivity of 10900 V/W at 10 GHz. Diodes of this kind demonstrates promising RF signal detection and can be used in heterodyne applications. An estimated curvature coefficient of 21.2 V⁻¹ at a bias of 0.72 V and cut-off frequency of 47.4 GHz were realized. Results of simulation and experiment have shown excellent agreement and an improved asymmetric behavior in the I−V characteristics in comparison to an equivalent PDB diode.

AB - This paper presents the principle of design and experimental demonstration of a prototype novel planar-doped potential-well barrier (PWB) diode concept that exploits the characteristics of both the PWB and planar-doped barrier (PDB) diodes. The highly doped (Be) sheet charge and potential well are inserted asymmetrically at nearly the same position within an intrinsic region to form a barrier. The hybrid device is designed so that the δ-doping is used to achieve a desirable minimum barrier height, while the active nature of charge in the potential well is used to enhance the device reverse bias performance. The diode achieved an ideality factor of 1.36 and corresponding voltage responsivity of 10900 V/W at 10 GHz. Diodes of this kind demonstrates promising RF signal detection and can be used in heterodyne applications. An estimated curvature coefficient of 21.2 V⁻¹ at a bias of 0.72 V and cut-off frequency of 47.4 GHz were realized. Results of simulation and experiment have shown excellent agreement and an improved asymmetric behavior in the I−V characteristics in comparison to an equivalent PDB diode.

KW - Drift-Diffusion (DD)

KW - orthophosphoric-based etch

KW - potential barriers

KW - responsivity

KW - zero-bias detection

U2 - 10.1109/TED.2017.2733724

DO - 10.1109/TED.2017.2733724

M3 - Article

VL - 64

SP - 4031

EP - 4035

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 10

ER -