A Novel Hybrid IMPATT-Gunn Device

Y. P. Teoh; Geoffrey Martin Dunn; Iain Stuart MacKenzie; N. Priestley

doi:10.1088/0268-1242/19/7/018

A Novel Hybrid IMPATT-Gunn Device

Y. P. Teoh, Geoffrey Martin Dunn, Iain Stuart MacKenzie, N. Priestley

Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A new form of microwave device which incorporates the avalanche region of the IMPATT diode and the drift region of the Gunn diode has been designed and simulated using the Monte Carlo method. Our simulations showed that for a 50 mum diameter unoptimized GaAs device, power of up to 0.18 W with an efficiency of 1.5% could be obtained at 75 GHz.

Original language	English
Pages (from-to)	885-889
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	19
Issue number	7
DOIs	https://doi.org/10.1088/0268-1242/19/7/018
Publication status	Published - Jul 2004

Keywords

LOW-NOISE
DIODES
SIMULATION
RANGE

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10.1088/0268-1242/19/7/018

Cite this

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title = "A Novel Hybrid IMPATT-Gunn Device",

abstract = "A new form of microwave device which incorporates the avalanche region of the IMPATT diode and the drift region of the Gunn diode has been designed and simulated using the Monte Carlo method. Our simulations showed that for a 50 mum diameter unoptimized GaAs device, power of up to 0.18 W with an efficiency of 1.5% could be obtained at 75 GHz.",

keywords = "LOW-NOISE, DIODES, SIMULATION, RANGE",

author = "Teoh, {Y. P.} and Dunn, {Geoffrey Martin} and MacKenzie, {Iain Stuart} and N. Priestley",

year = "2004",

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AU - Teoh, Y. P.

AU - Dunn, Geoffrey Martin

AU - MacKenzie, Iain Stuart

AU - Priestley, N.

PY - 2004/7

Y1 - 2004/7

N2 - A new form of microwave device which incorporates the avalanche region of the IMPATT diode and the drift region of the Gunn diode has been designed and simulated using the Monte Carlo method. Our simulations showed that for a 50 mum diameter unoptimized GaAs device, power of up to 0.18 W with an efficiency of 1.5% could be obtained at 75 GHz.

AB - A new form of microwave device which incorporates the avalanche region of the IMPATT diode and the drift region of the Gunn diode has been designed and simulated using the Monte Carlo method. Our simulations showed that for a 50 mum diameter unoptimized GaAs device, power of up to 0.18 W with an efficiency of 1.5% could be obtained at 75 GHz.

KW - LOW-NOISE

KW - DIODES

KW - SIMULATION

KW - RANGE

U2 - 10.1088/0268-1242/19/7/018

DO - 10.1088/0268-1242/19/7/018

M3 - Article

VL - 19

SP - 885

EP - 889

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 7

ER -

A Novel Hybrid IMPATT-Gunn Device

Abstract

Keywords

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