A new form of microwave device which incorporates the avalanche region of the IMPATT diode and the drift region of the Gunn diode has been designed and simulated using the Monte Carlo method. Our simulations showed that for a 50 mum diameter unoptimized GaAs device, power of up to 0.18 W with an efficiency of 1.5% could be obtained at 75 GHz.
|Number of pages||4|
|Journal||Semiconductor Science and Technology|
|Publication status||Published - Jul 2004|