A Novel Hybrid IMPATT-Gunn Device

Y. P. Teoh, Geoffrey Martin Dunn, Iain Stuart MacKenzie, N. Priestley

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A new form of microwave device which incorporates the avalanche region of the IMPATT diode and the drift region of the Gunn diode has been designed and simulated using the Monte Carlo method. Our simulations showed that for a 50 mum diameter unoptimized GaAs device, power of up to 0.18 W with an efficiency of 1.5% could be obtained at 75 GHz.

Original languageEnglish
Pages (from-to)885-889
Number of pages4
JournalSemiconductor Science and Technology
Volume19
Issue number7
DOIs
Publication statusPublished - Jul 2004

Keywords

  • LOW-NOISE
  • DIODES
  • SIMULATION
  • RANGE

Cite this

A Novel Hybrid IMPATT-Gunn Device. / Teoh, Y. P.; Dunn, Geoffrey Martin; MacKenzie, Iain Stuart; Priestley, N.

In: Semiconductor Science and Technology, Vol. 19, No. 7, 07.2004, p. 885-889.

Research output: Contribution to journalArticle

Teoh, Y. P. ; Dunn, Geoffrey Martin ; MacKenzie, Iain Stuart ; Priestley, N. / A Novel Hybrid IMPATT-Gunn Device. In: Semiconductor Science and Technology. 2004 ; Vol. 19, No. 7. pp. 885-889.
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