A Novel Hybrid IMPATT-Gunn Device

Y. P. Teoh, Geoffrey Martin Dunn, Iain Stuart MacKenzie, N. Priestley

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1 Citation (Scopus)

Abstract

A new form of microwave device which incorporates the avalanche region of the IMPATT diode and the drift region of the Gunn diode has been designed and simulated using the Monte Carlo method. Our simulations showed that for a 50 mum diameter unoptimized GaAs device, power of up to 0.18 W with an efficiency of 1.5% could be obtained at 75 GHz.

Original languageEnglish
Pages (from-to)885-889
Number of pages4
JournalSemiconductor Science and Technology
Volume19
Issue number7
DOIs
Publication statusPublished - Jul 2004

Keywords

  • LOW-NOISE
  • DIODES
  • SIMULATION
  • RANGE

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