A theoretical study of differing active region doping profiles for W-band (75-110 GHz) InP Gunn diodes

Geoffrey Martin Dunn, M. J. Kearney

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

InP Gunn diodes are widely used as high power microwave sources in the W-band frequency range (75-110 GHz), but interesting questions remain as to the optimal active region doping profile for such devices. In this paper we carry out a detailed theoretical study, using Monte Carlo simulations, of three types of doping profiles: (i) uniform doping, (ii) graded doping (i.e. increasing linearly from cathode to anode) and (iii) notch doping (a lightly doped region adjacent to the cathode). By studying the effects of varying all the relevant parameters, such as doping levels, active region length, bias levels and temperature, under both DC and RF conditions, we argue that the notch doping approach is superior, offering high performance combined with a greater tolerance to doping fluctuations.

Original languageEnglish
Pages (from-to)794-802
Number of pages8
JournalSemiconductor Science and Technology
Volume18
Issue number8
DOIs
Publication statusPublished - Aug 2003

Keywords

  • TRANSFERRED-ELECTRON DEVICES
  • FUNDAMENTAL-MODE OPERATION
  • MONTE-CARLO SIMULATION
  • DESIGN
  • GAAS
  • SEMICONDUCTORS
  • PERFORMANCE
  • TRANSPORT
  • RANGE

Cite this

A theoretical study of differing active region doping profiles for W-band (75-110 GHz) InP Gunn diodes. / Dunn, Geoffrey Martin; Kearney, M. J.

In: Semiconductor Science and Technology, Vol. 18, No. 8, 08.2003, p. 794-802.

Research output: Contribution to journalArticle

@article{ecf431570aa641d185b52f527553becf,
title = "A theoretical study of differing active region doping profiles for W-band (75-110 GHz) InP Gunn diodes",
abstract = "InP Gunn diodes are widely used as high power microwave sources in the W-band frequency range (75-110 GHz), but interesting questions remain as to the optimal active region doping profile for such devices. In this paper we carry out a detailed theoretical study, using Monte Carlo simulations, of three types of doping profiles: (i) uniform doping, (ii) graded doping (i.e. increasing linearly from cathode to anode) and (iii) notch doping (a lightly doped region adjacent to the cathode). By studying the effects of varying all the relevant parameters, such as doping levels, active region length, bias levels and temperature, under both DC and RF conditions, we argue that the notch doping approach is superior, offering high performance combined with a greater tolerance to doping fluctuations.",
keywords = "TRANSFERRED-ELECTRON DEVICES, FUNDAMENTAL-MODE OPERATION, MONTE-CARLO SIMULATION, DESIGN, GAAS, SEMICONDUCTORS, PERFORMANCE, TRANSPORT, RANGE",
author = "Dunn, {Geoffrey Martin} and Kearney, {M. J.}",
year = "2003",
month = "8",
doi = "10.1088/0268-1242/18/8/313",
language = "English",
volume = "18",
pages = "794--802",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "8",

}

TY - JOUR

T1 - A theoretical study of differing active region doping profiles for W-band (75-110 GHz) InP Gunn diodes

AU - Dunn, Geoffrey Martin

AU - Kearney, M. J.

PY - 2003/8

Y1 - 2003/8

N2 - InP Gunn diodes are widely used as high power microwave sources in the W-band frequency range (75-110 GHz), but interesting questions remain as to the optimal active region doping profile for such devices. In this paper we carry out a detailed theoretical study, using Monte Carlo simulations, of three types of doping profiles: (i) uniform doping, (ii) graded doping (i.e. increasing linearly from cathode to anode) and (iii) notch doping (a lightly doped region adjacent to the cathode). By studying the effects of varying all the relevant parameters, such as doping levels, active region length, bias levels and temperature, under both DC and RF conditions, we argue that the notch doping approach is superior, offering high performance combined with a greater tolerance to doping fluctuations.

AB - InP Gunn diodes are widely used as high power microwave sources in the W-band frequency range (75-110 GHz), but interesting questions remain as to the optimal active region doping profile for such devices. In this paper we carry out a detailed theoretical study, using Monte Carlo simulations, of three types of doping profiles: (i) uniform doping, (ii) graded doping (i.e. increasing linearly from cathode to anode) and (iii) notch doping (a lightly doped region adjacent to the cathode). By studying the effects of varying all the relevant parameters, such as doping levels, active region length, bias levels and temperature, under both DC and RF conditions, we argue that the notch doping approach is superior, offering high performance combined with a greater tolerance to doping fluctuations.

KW - TRANSFERRED-ELECTRON DEVICES

KW - FUNDAMENTAL-MODE OPERATION

KW - MONTE-CARLO SIMULATION

KW - DESIGN

KW - GAAS

KW - SEMICONDUCTORS

KW - PERFORMANCE

KW - TRANSPORT

KW - RANGE

U2 - 10.1088/0268-1242/18/8/313

DO - 10.1088/0268-1242/18/8/313

M3 - Article

VL - 18

SP - 794

EP - 802

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 8

ER -