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A theoretical study of differing active region doping profiles for W-band (75-110 GHz) InP Gunn diodes
Geoffrey Martin Dunn, M. J. Kearney
Physics
Research output
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Contribution to journal
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Article
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peer-review
21
Citations (Scopus)
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Dive into the research topics of 'A theoretical study of differing active region doping profiles for W-band (75-110 GHz) InP Gunn diodes'. Together they form a unique fingerprint.
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Engineering & Materials Science
Gunn diodes
100%
Semiconductor doping
92%
Doping (additives)
68%
Cathodes
20%
Anodes
9%
Frequency bands
9%
Microwaves
8%
Temperature
4%
Physics & Astronomy
Gunn diodes
85%
profiles
33%
notches
16%
cathodes
12%
anodes
6%
direct current
5%
frequency ranges
5%
microwaves
5%
performance
3%
simulation
2%
temperature
2%
Chemical Compounds
Cathode
44%
Monte Carlo Method
32%
Microwave
24%
Anode
22%
Length
18%