An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar gunn diode oscillator

Mohamed Ismaeel  Maricar; Ata Khalid; Geoff Dunn; Steve  Greedy; Dave Thomas; David R S Cumming; Chris H Oxley

doi:10.1002/mop.31312

An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar gunn diode oscillator

Mohamed Ismaeel Maricar, Ata Khalid, Geoff Dunn, Steve Greedy, Dave Thomas, David R S Cumming, Chris H Oxley

Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Abstract

The planar Gunn diode offers the potential of microwave, milli‐metric and THz‐based oscillators, which can be fabricated as part of a microwave monolithic integrated circuit (mmic). The paper develops an electrical representation of an aluminum gallium arsenide (AlGaAs) based planar Gunn diode with an active channel length of approximately 4 μm and width of 120 μm, embedded in an oscillator circuit. The work indicates a maximum simulated RF output power of +5 dBm compared with published experimental results of −19 dBm for similar diodes.

Original language	English
Pages (from-to)	2144-2148
Number of pages	5
Journal	Microwave and Optical Technology Letters
Volume	60
Issue number	9
Early online date	11 Aug 2018
DOIs	https://doi.org/10.1002/mop.31312
Publication status	Published - 30 Sep 2018

Keywords

active channel length
electricalequivalent circuit model
GaAs
impedance
planar Gunn diode
RF output power

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title = "An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar gunn diode oscillator",

abstract = "AbstractThe planar Gunn diode offers the potential of microwave, milli‐metric and THz‐based oscillators, which can be fabricated as part of a microwave monolithic integrated circuit (mmic). The paper develops an electrical representation of an aluminum gallium arsenide (AlGaAs) based planar Gunn diode with an active channel length of approximately 4 μm and width of 120 μm, embedded in an oscillator circuit. The work indicates a maximum simulated RF output power of +5 dBm compared with published experimental results of −19 dBm for similar diodes.",

keywords = "active channel length, electricalequivalent circuit model, GaAs, impedance, planar Gunn diode, RF output power",

author = "Maricar, {Mohamed Ismaeel} and Ata Khalid and Geoff Dunn and Steve Greedy and Dave Thomas and Cumming, {David R S} and Oxley, {Chris H}",

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T1 - An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar gunn diode oscillator

AU - Maricar, Mohamed Ismaeel

AU - Khalid, Ata

AU - Dunn, Geoff

AU - Greedy, Steve

AU - Thomas, Dave

AU - Cumming, David R S

AU - Oxley, Chris H

PY - 2018/9/30

Y1 - 2018/9/30

N2 - AbstractThe planar Gunn diode offers the potential of microwave, milli‐metric and THz‐based oscillators, which can be fabricated as part of a microwave monolithic integrated circuit (mmic). The paper develops an electrical representation of an aluminum gallium arsenide (AlGaAs) based planar Gunn diode with an active channel length of approximately 4 μm and width of 120 μm, embedded in an oscillator circuit. The work indicates a maximum simulated RF output power of +5 dBm compared with published experimental results of −19 dBm for similar diodes.

AB - AbstractThe planar Gunn diode offers the potential of microwave, milli‐metric and THz‐based oscillators, which can be fabricated as part of a microwave monolithic integrated circuit (mmic). The paper develops an electrical representation of an aluminum gallium arsenide (AlGaAs) based planar Gunn diode with an active channel length of approximately 4 μm and width of 120 μm, embedded in an oscillator circuit. The work indicates a maximum simulated RF output power of +5 dBm compared with published experimental results of −19 dBm for similar diodes.

KW - active channel length

KW - electricalequivalent circuit model

KW - GaAs

KW - impedance

KW - planar Gunn diode

KW - RF output power

UR - https://onlinelibrary.wiley.com/doi/full/10.1002/mop.31312

U2 - 10.1002/mop.31312

DO - 10.1002/mop.31312

M3 - Article

VL - 60

SP - 2144

EP - 2148

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

SN - 0895-2477

IS - 9

ER -

An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar gunn diode oscillator

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Keywords

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