An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar gunn diode oscillator

Mohamed Ismaeel Maricar, Ata Khalid, Geoff Dunn, Steve Greedy, Dave Thomas, David R S Cumming, Chris H Oxley

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract


Abstract

The planar Gunn diode offers the potential of microwave, milli‐metric and THz‐based oscillators, which can be fabricated as part of a microwave monolithic integrated circuit (mmic). The paper develops an electrical representation of an aluminum gallium arsenide (AlGaAs) based planar Gunn diode with an active channel length of approximately 4 μm and width of 120 μm, embedded in an oscillator circuit. The work indicates a maximum simulated RF output power of +5 dBm compared with published experimental results of −19 dBm for similar diodes.
Original languageEnglish
Pages (from-to)2144-2148
Number of pages5
JournalMicrowave and Optical Technology Letters
Volume60
Issue number9
Early online date11 Aug 2018
DOIs
Publication statusPublished - 30 Sep 2018

Keywords

  • active channel length
  • electricalequivalent circuit model
  • GaAs
  • impedance
  • planar Gunn diode
  • RF output power

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