The planar Gunn diode offers the potential of microwave, milli‐metric and THz‐based oscillators, which can be fabricated as part of a microwave monolithic integrated circuit (mmic). The paper develops an electrical representation of an aluminum gallium arsenide (AlGaAs) based planar Gunn diode with an active channel length of approximately 4 μm and width of 120 μm, embedded in an oscillator circuit. The work indicates a maximum simulated RF output power of +5 dBm compared with published experimental results of −19 dBm for similar diodes.
- active channel length
- electricalequivalent circuit model
- planar Gunn diode
- RF output power
Maricar, M. I., Khalid, A., Dunn, G., Greedy, S., Thomas, D., Cumming, D. R. S., & Oxley, C. H. (2018). An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar gunn diode oscillator. Microwave and Optical Technology Letters, 60(9), 2144-2148. https://doi.org/10.1002/mop.31312