Density Functional Theory Calculation of the Band Alignment of (101̅0) InxGa1–xN/Water Interfaces

Andrew C Meng, Jun Cheng, Michiel Sprik

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Conduction band edge (CBE) and valence band edge (VBE) positions of InxGa1-xN photoelectrodes were computed using density functional theory methods. The band edges of fully solvated GaN and InN model systems were aligned with respect to the standard hydrogen electrode using a molecular dynamics hydrogen electrode scheme applied earlier to TiO2/water interfaces. Similar to the findings for TiO2, we found that the Purdew-Burke-Ernzerhof (PBE) functional gives a VBE potential which is too negative by 1 V. This cathodic bias is largely corrected by application of the Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional containing a fraction of Hartree-Fock exchange. The effect of a change of composition was investigated using simplified model systems consisting of vacuum slabs covered on both sides by one monolayer of H2O. The CBE was found to vary linearly with In content. The VBE, in comparison, is much less sensitive to composition. The data show that the band edges straddle the hydrogen and oxygen evolution potentials for In fractions less than 47%. The band gap was found to exceed 2 eV for an In fraction less than 54%.

Original languageEnglish
Pages (from-to)1928-1939
Number of pages12
JournalThe Journal of Physical Chemistry B
Volume120
Issue number8
Early online date1 Feb 2016
DOIs
Publication statusPublished - 3 Mar 2016

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Valence bands
Density functional theory
Conduction bands
Hydrogen
Water
Electrodes
Chemical analysis
Molecular dynamics
Monolayers
Energy gap
Vacuum
Oxygen

Cite this

Density Functional Theory Calculation of the Band Alignment of (101̅0) InxGa1–xN/Water Interfaces. / Meng, Andrew C; Cheng, Jun; Sprik, Michiel.

In: The Journal of Physical Chemistry B, Vol. 120, No. 8, 03.03.2016, p. 1928-1939.

Research output: Contribution to journalArticle

Meng, Andrew C ; Cheng, Jun ; Sprik, Michiel. / Density Functional Theory Calculation of the Band Alignment of (101̅0) InxGa1–xN/Water Interfaces. In: The Journal of Physical Chemistry B. 2016 ; Vol. 120, No. 8. pp. 1928-1939.
@article{e013ce1a83b945908e69f4e934ef807c,
title = "Density Functional Theory Calculation of the Band Alignment of (101̅0) InxGa1–xN/Water Interfaces",
abstract = "Conduction band edge (CBE) and valence band edge (VBE) positions of InxGa1-xN photoelectrodes were computed using density functional theory methods. The band edges of fully solvated GaN and InN model systems were aligned with respect to the standard hydrogen electrode using a molecular dynamics hydrogen electrode scheme applied earlier to TiO2/water interfaces. Similar to the findings for TiO2, we found that the Purdew-Burke-Ernzerhof (PBE) functional gives a VBE potential which is too negative by 1 V. This cathodic bias is largely corrected by application of the Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional containing a fraction of Hartree-Fock exchange. The effect of a change of composition was investigated using simplified model systems consisting of vacuum slabs covered on both sides by one monolayer of H2O. The CBE was found to vary linearly with In content. The VBE, in comparison, is much less sensitive to composition. The data show that the band edges straddle the hydrogen and oxygen evolution potentials for In fractions less than 47{\%}. The band gap was found to exceed 2 eV for an In fraction less than 54{\%}.",
author = "Meng, {Andrew C} and Jun Cheng and Michiel Sprik",
note = "ACKNOWLEDGMENTS A.C.M. is grateful to the Winston Churchill Foundation of the United States for a scholarship. The computations were carried out on the Archer facility of the National Supercomputer Service of the United Kingdom using the computer time allocation of the UK Car−Parrinello consortium (UKCP) funded by the Engineering and Physical Sciences Research Council (EPSRC) of the United Kingdom. Supporting Information The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.jpcb.5b09807.",
year = "2016",
month = "3",
day = "3",
doi = "10.1021/acs.jpcb.5b09807",
language = "English",
volume = "120",
pages = "1928--1939",
journal = "The Journal of Physical Chemistry B",
issn = "1520-6106",
publisher = "AMER CHEMICAL SOC",
number = "8",

}

TY - JOUR

T1 - Density Functional Theory Calculation of the Band Alignment of (101̅0) InxGa1–xN/Water Interfaces

AU - Meng, Andrew C

AU - Cheng, Jun

AU - Sprik, Michiel

N1 - ACKNOWLEDGMENTS A.C.M. is grateful to the Winston Churchill Foundation of the United States for a scholarship. The computations were carried out on the Archer facility of the National Supercomputer Service of the United Kingdom using the computer time allocation of the UK Car−Parrinello consortium (UKCP) funded by the Engineering and Physical Sciences Research Council (EPSRC) of the United Kingdom. Supporting Information The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.jpcb.5b09807.

PY - 2016/3/3

Y1 - 2016/3/3

N2 - Conduction band edge (CBE) and valence band edge (VBE) positions of InxGa1-xN photoelectrodes were computed using density functional theory methods. The band edges of fully solvated GaN and InN model systems were aligned with respect to the standard hydrogen electrode using a molecular dynamics hydrogen electrode scheme applied earlier to TiO2/water interfaces. Similar to the findings for TiO2, we found that the Purdew-Burke-Ernzerhof (PBE) functional gives a VBE potential which is too negative by 1 V. This cathodic bias is largely corrected by application of the Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional containing a fraction of Hartree-Fock exchange. The effect of a change of composition was investigated using simplified model systems consisting of vacuum slabs covered on both sides by one monolayer of H2O. The CBE was found to vary linearly with In content. The VBE, in comparison, is much less sensitive to composition. The data show that the band edges straddle the hydrogen and oxygen evolution potentials for In fractions less than 47%. The band gap was found to exceed 2 eV for an In fraction less than 54%.

AB - Conduction band edge (CBE) and valence band edge (VBE) positions of InxGa1-xN photoelectrodes were computed using density functional theory methods. The band edges of fully solvated GaN and InN model systems were aligned with respect to the standard hydrogen electrode using a molecular dynamics hydrogen electrode scheme applied earlier to TiO2/water interfaces. Similar to the findings for TiO2, we found that the Purdew-Burke-Ernzerhof (PBE) functional gives a VBE potential which is too negative by 1 V. This cathodic bias is largely corrected by application of the Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional containing a fraction of Hartree-Fock exchange. The effect of a change of composition was investigated using simplified model systems consisting of vacuum slabs covered on both sides by one monolayer of H2O. The CBE was found to vary linearly with In content. The VBE, in comparison, is much less sensitive to composition. The data show that the band edges straddle the hydrogen and oxygen evolution potentials for In fractions less than 47%. The band gap was found to exceed 2 eV for an In fraction less than 54%.

U2 - 10.1021/acs.jpcb.5b09807

DO - 10.1021/acs.jpcb.5b09807

M3 - Article

VL - 120

SP - 1928

EP - 1939

JO - The Journal of Physical Chemistry B

JF - The Journal of Physical Chemistry B

SN - 1520-6106

IS - 8

ER -