Design, fabrication and characterization of In0.23Ga0.77As-channel planar Gunn diodes for millimeter wave applications

Chong Li, Ata Khalid, Sonia H. Paluchowski Caldwell, Martin C. Holland, Geoff M. Dunn, Iain G. Thayne, David R. S. Cumming

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Abstract: We present detailed design, fabrication and characterization of In0.23Ga0.77As-based planar Gunn diodes in this paper. The devices have AlGaAs/InGaAs/AlGaAs heterojunctions that were grown on a semi-insulating GaAs wafer using molecular beam epitaxy technology. Electron beam lithography was used to define anode and cathode terminal patterns. Devices with various anode-cathode separations (e.g. 4-1.4 mu m) were fabricated on the same chip. Spectrum measurements showed oscillation frequencies between 36 GHz and 118 GHz in the fundamental transit-time mode of operation. These devices show great potential as millimeter wave and sub-millimeter wave signal sources for their small size, MMIC compatibility and lithographically controlled oscillation frequencies. (C) 2011 Elsevier Ltd. All rights reserved.
Original languageEnglish
Pages (from-to)67-72
Number of pages6
JournalSolid State Electronics
Volume64
Issue number1
DOIs
Publication statusPublished - Oct 2011

Fingerprint

Gunn diodes
Millimeter waves
millimeter waves
Anodes
Cathodes
Submillimeter waves
Fabrication
fabrication
aluminum gallium arsenides
Electron beam lithography
Monolithic microwave integrated circuits
anodes
cathodes
Molecular beam epitaxy
Heterojunctions
oscillations
submillimeter waves
transit time
compatibility
heterojunctions

Keywords

  • transferred-electron oscillators
  • heterostructures
  • frequency
  • power
  • band
  • GHZ
  • instability
  • modulation
  • HEMTS

Cite this

Design, fabrication and characterization of In0.23Ga0.77As-channel planar Gunn diodes for millimeter wave applications. / Li, Chong; Khalid, Ata; Paluchowski Caldwell, Sonia H.; Holland, Martin C.; Dunn, Geoff M.; Thayne, Iain G.; Cumming, David R. S.

In: Solid State Electronics, Vol. 64, No. 1, 10.2011, p. 67-72.

Research output: Contribution to journalArticle

Li, Chong ; Khalid, Ata ; Paluchowski Caldwell, Sonia H. ; Holland, Martin C. ; Dunn, Geoff M. ; Thayne, Iain G. ; Cumming, David R. S. / Design, fabrication and characterization of In0.23Ga0.77As-channel planar Gunn diodes for millimeter wave applications. In: Solid State Electronics. 2011 ; Vol. 64, No. 1. pp. 67-72.
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AU - Li, Chong

AU - Khalid, Ata

AU - Paluchowski Caldwell, Sonia H.

AU - Holland, Martin C.

AU - Dunn, Geoff M.

AU - Thayne, Iain G.

AU - Cumming, David R. S.

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AB - Abstract: We present detailed design, fabrication and characterization of In0.23Ga0.77As-based planar Gunn diodes in this paper. The devices have AlGaAs/InGaAs/AlGaAs heterojunctions that were grown on a semi-insulating GaAs wafer using molecular beam epitaxy technology. Electron beam lithography was used to define anode and cathode terminal patterns. Devices with various anode-cathode separations (e.g. 4-1.4 mu m) were fabricated on the same chip. Spectrum measurements showed oscillation frequencies between 36 GHz and 118 GHz in the fundamental transit-time mode of operation. These devices show great potential as millimeter wave and sub-millimeter wave signal sources for their small size, MMIC compatibility and lithographically controlled oscillation frequencies. (C) 2011 Elsevier Ltd. All rights reserved.

KW - transferred-electron oscillators

KW - heterostructures

KW - frequency

KW - power

KW - band

KW - GHZ

KW - instability

KW - modulation

KW - HEMTS

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