Design, fabrication and characterization of In0.23Ga0.77As-channel planar Gunn diodes for millimeter wave applications

Chong Li; Ata Khalid; Sonia H. Paluchowski Caldwell; Martin C. Holland; Geoff M. Dunn; Iain G. Thayne; David R. S. Cumming

doi:10.1016/j.sse.2011.07.008

Design, fabrication and characterization of In0.23Ga0.77As-channel planar Gunn diodes for millimeter wave applications

Chong Li, Ata Khalid, Sonia H. Paluchowski Caldwell, Martin C. Holland, Geoff M. Dunn, Iain G. Thayne, David R. S. Cumming

Physics

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

Abstract: We present detailed design, fabrication and characterization of In0.23Ga0.77As-based planar Gunn diodes in this paper. The devices have AlGaAs/InGaAs/AlGaAs heterojunctions that were grown on a semi-insulating GaAs wafer using molecular beam epitaxy technology. Electron beam lithography was used to define anode and cathode terminal patterns. Devices with various anode-cathode separations (e.g. 4-1.4 mu m) were fabricated on the same chip. Spectrum measurements showed oscillation frequencies between 36 GHz and 118 GHz in the fundamental transit-time mode of operation. These devices show great potential as millimeter wave and sub-millimeter wave signal sources for their small size, MMIC compatibility and lithographically controlled oscillation frequencies. (C) 2011 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	67-72
Number of pages	6
Journal	Solid State Electronics
Volume	64
Issue number	1
DOIs	https://doi.org/10.1016/j.sse.2011.07.008
Publication status	Published - Oct 2011

Keywords

transferred-electron oscillators
heterostructures
frequency
power
band
GHZ
instability
modulation
HEMTS

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10.1016/j.sse.2011.07.008

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@article{93cbcbc6cbba4d93941f90c52585d6d4,

title = "Design, fabrication and characterization of In0.23Ga0.77As-channel planar Gunn diodes for millimeter wave applications",

abstract = "Abstract: We present detailed design, fabrication and characterization of In0.23Ga0.77As-based planar Gunn diodes in this paper. The devices have AlGaAs/InGaAs/AlGaAs heterojunctions that were grown on a semi-insulating GaAs wafer using molecular beam epitaxy technology. Electron beam lithography was used to define anode and cathode terminal patterns. Devices with various anode-cathode separations (e.g. 4-1.4 mu m) were fabricated on the same chip. Spectrum measurements showed oscillation frequencies between 36 GHz and 118 GHz in the fundamental transit-time mode of operation. These devices show great potential as millimeter wave and sub-millimeter wave signal sources for their small size, MMIC compatibility and lithographically controlled oscillation frequencies. (C) 2011 Elsevier Ltd. All rights reserved. ",

keywords = "transferred-electron oscillators , heterostructures, frequency, power, band, GHZ , instability, modulation, HEMTS ",

author = "Chong Li and Ata Khalid and {Paluchowski Caldwell}, {Sonia H.} and Holland, {Martin C.} and Dunn, {Geoff M.} and Thayne, {Iain G.} and Cumming, {David R. S.}",

year = "2011",

month = oct,

doi = "10.1016/j.sse.2011.07.008",

language = "English",

volume = "64",

pages = "67--72",

journal = "Solid State Electronics",

issn = "0584-0759",

publisher = "Elsevier Limited",

number = "1",

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TY - JOUR

T1 - Design, fabrication and characterization of In0.23Ga0.77As-channel planar Gunn diodes for millimeter wave applications

AU - Li, Chong

AU - Khalid, Ata

AU - Paluchowski Caldwell, Sonia H.

AU - Holland, Martin C.

AU - Dunn, Geoff M.

AU - Thayne, Iain G.

AU - Cumming, David R. S.

PY - 2011/10

Y1 - 2011/10

N2 - Abstract: We present detailed design, fabrication and characterization of In0.23Ga0.77As-based planar Gunn diodes in this paper. The devices have AlGaAs/InGaAs/AlGaAs heterojunctions that were grown on a semi-insulating GaAs wafer using molecular beam epitaxy technology. Electron beam lithography was used to define anode and cathode terminal patterns. Devices with various anode-cathode separations (e.g. 4-1.4 mu m) were fabricated on the same chip. Spectrum measurements showed oscillation frequencies between 36 GHz and 118 GHz in the fundamental transit-time mode of operation. These devices show great potential as millimeter wave and sub-millimeter wave signal sources for their small size, MMIC compatibility and lithographically controlled oscillation frequencies. (C) 2011 Elsevier Ltd. All rights reserved.

AB - Abstract: We present detailed design, fabrication and characterization of In0.23Ga0.77As-based planar Gunn diodes in this paper. The devices have AlGaAs/InGaAs/AlGaAs heterojunctions that were grown on a semi-insulating GaAs wafer using molecular beam epitaxy technology. Electron beam lithography was used to define anode and cathode terminal patterns. Devices with various anode-cathode separations (e.g. 4-1.4 mu m) were fabricated on the same chip. Spectrum measurements showed oscillation frequencies between 36 GHz and 118 GHz in the fundamental transit-time mode of operation. These devices show great potential as millimeter wave and sub-millimeter wave signal sources for their small size, MMIC compatibility and lithographically controlled oscillation frequencies. (C) 2011 Elsevier Ltd. All rights reserved.

KW - transferred-electron oscillators

KW - heterostructures

KW - frequency

KW - power

KW - band

KW - GHZ

KW - instability

KW - modulation

KW - HEMTS

U2 - 10.1016/j.sse.2011.07.008

DO - 10.1016/j.sse.2011.07.008

M3 - Article

SN - 0584-0759

VL - 64

SP - 67

EP - 72

JO - Solid State Electronics

JF - Solid State Electronics

IS - 1

ER -

Design, fabrication and characterization of In0.23Ga0.77As-channel planar Gunn diodes for millimeter wave applications

Abstract

Keywords

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