Double transit region Gunn diodes

K. S. Lau, R. C. Tozer, J. P. R. David, M. Hopkinson, G. J. Rees, M. Carr, N. Priestley, Y. P. Teoh, G. M. Dunn

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report the first epitaxially grown, double transit region Gunn diode oscillator. The prototype device was operated at its second harmonic of 77 GHz, giving an RF output power of 64 mW as compared with 54 mW from the corresponding single transit region device. Measurements of threshold and breakdown voltage and of RF power support the interpretation of coherent nucleation of Gunn domains in the two transit regions and the satisfactory operation of the device.

Original languageEnglish
Pages (from-to)245-248
Number of pages4
JournalSemiconductor Science and Technology
Volume22
Issue number3
Early online date30 Jan 2007
DOIs
Publication statusPublished - Mar 2007

Keywords

  • Monte-Carlo analysis
  • power-generation
  • oscillators
  • devices

Cite this

Lau, K. S., Tozer, R. C., David, J. P. R., Hopkinson, M., Rees, G. J., Carr, M., ... Dunn, G. M. (2007). Double transit region Gunn diodes. Semiconductor Science and Technology, 22(3), 245-248. https://doi.org/10.1088/0268-1242/22/3/012

Double transit region Gunn diodes. / Lau, K. S.; Tozer, R. C.; David, J. P. R.; Hopkinson, M.; Rees, G. J.; Carr, M.; Priestley, N.; Teoh, Y. P.; Dunn, G. M.

In: Semiconductor Science and Technology, Vol. 22, No. 3, 03.2007, p. 245-248.

Research output: Contribution to journalArticle

Lau, KS, Tozer, RC, David, JPR, Hopkinson, M, Rees, GJ, Carr, M, Priestley, N, Teoh, YP & Dunn, GM 2007, 'Double transit region Gunn diodes', Semiconductor Science and Technology, vol. 22, no. 3, pp. 245-248. https://doi.org/10.1088/0268-1242/22/3/012
Lau KS, Tozer RC, David JPR, Hopkinson M, Rees GJ, Carr M et al. Double transit region Gunn diodes. Semiconductor Science and Technology. 2007 Mar;22(3):245-248. https://doi.org/10.1088/0268-1242/22/3/012
Lau, K. S. ; Tozer, R. C. ; David, J. P. R. ; Hopkinson, M. ; Rees, G. J. ; Carr, M. ; Priestley, N. ; Teoh, Y. P. ; Dunn, G. M. / Double transit region Gunn diodes. In: Semiconductor Science and Technology. 2007 ; Vol. 22, No. 3. pp. 245-248.
@article{16c39d1bd419452d821d0201d4786a31,
title = "Double transit region Gunn diodes",
abstract = "We report the first epitaxially grown, double transit region Gunn diode oscillator. The prototype device was operated at its second harmonic of 77 GHz, giving an RF output power of 64 mW as compared with 54 mW from the corresponding single transit region device. Measurements of threshold and breakdown voltage and of RF power support the interpretation of coherent nucleation of Gunn domains in the two transit regions and the satisfactory operation of the device.",
keywords = "Monte-Carlo analysis, power-generation, oscillators, devices",
author = "Lau, {K. S.} and Tozer, {R. C.} and David, {J. P. R.} and M. Hopkinson and Rees, {G. J.} and M. Carr and N. Priestley and Teoh, {Y. P.} and Dunn, {G. M.}",
year = "2007",
month = "3",
doi = "10.1088/0268-1242/22/3/012",
language = "English",
volume = "22",
pages = "245--248",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "3",

}

TY - JOUR

T1 - Double transit region Gunn diodes

AU - Lau, K. S.

AU - Tozer, R. C.

AU - David, J. P. R.

AU - Hopkinson, M.

AU - Rees, G. J.

AU - Carr, M.

AU - Priestley, N.

AU - Teoh, Y. P.

AU - Dunn, G. M.

PY - 2007/3

Y1 - 2007/3

N2 - We report the first epitaxially grown, double transit region Gunn diode oscillator. The prototype device was operated at its second harmonic of 77 GHz, giving an RF output power of 64 mW as compared with 54 mW from the corresponding single transit region device. Measurements of threshold and breakdown voltage and of RF power support the interpretation of coherent nucleation of Gunn domains in the two transit regions and the satisfactory operation of the device.

AB - We report the first epitaxially grown, double transit region Gunn diode oscillator. The prototype device was operated at its second harmonic of 77 GHz, giving an RF output power of 64 mW as compared with 54 mW from the corresponding single transit region device. Measurements of threshold and breakdown voltage and of RF power support the interpretation of coherent nucleation of Gunn domains in the two transit regions and the satisfactory operation of the device.

KW - Monte-Carlo analysis

KW - power-generation

KW - oscillators

KW - devices

U2 - 10.1088/0268-1242/22/3/012

DO - 10.1088/0268-1242/22/3/012

M3 - Article

VL - 22

SP - 245

EP - 248

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 3

ER -