Double transit region Gunn diodes

K. S. Lau, R. C. Tozer, J. P. R. David, M. Hopkinson, G. J. Rees, M. Carr, N. Priestley, Y. P. Teoh, G. M. Dunn

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report the first epitaxially grown, double transit region Gunn diode oscillator. The prototype device was operated at its second harmonic of 77 GHz, giving an RF output power of 64 mW as compared with 54 mW from the corresponding single transit region device. Measurements of threshold and breakdown voltage and of RF power support the interpretation of coherent nucleation of Gunn domains in the two transit regions and the satisfactory operation of the device.

Original languageEnglish
Pages (from-to)245-248
Number of pages4
JournalSemiconductor Science and Technology
Volume22
Issue number3
Early online date30 Jan 2007
DOIs
Publication statusPublished - Mar 2007

Keywords

  • Monte-Carlo analysis
  • power-generation
  • oscillators
  • devices

Cite this

Lau, K. S., Tozer, R. C., David, J. P. R., Hopkinson, M., Rees, G. J., Carr, M., Priestley, N., Teoh, Y. P., & Dunn, G. M. (2007). Double transit region Gunn diodes. Semiconductor Science and Technology, 22(3), 245-248. https://doi.org/10.1088/0268-1242/22/3/012