Effect of silicon substitution on the sintering and microstructure of hydroxyapatite

Iain Ronald Gibson, S. M. Best, W. Bonfield

Research output: Contribution to journalArticle

109 Citations (Scopus)

Abstract

The substitution of between 0 and 1.6 wt% silicon (Si-HA) in hydroxyapatite (HA) inhibited densification at low temperatures (1000degrees-1150degreesC), with these effects being more significant as the level of silicon substitution was increased. For higher sintering temperatures (1200degrees-1300degreesC), the sintered densities of HA and Si-HA compositions were comparable. Examination of the ceramic microstructures by scanning electron microscopy (SEM) showed that silicon substitution also inhibited grain growth at higher sintering temperatures (1200degrees-1300degreesC). The negative effect of silicon substitution on the sintering of HA at low temperatures (1000degrees-1150degreesC) was reflected in the hardness values of the ceramics. However, for higher sintering temperatures, e.g., 1300degreesC, where sintered densities were comparable, the hardness values of Si-HA compositions were equal to or greater than that of HA, reflecting the smaller grain sizes observed for the former.

Original languageEnglish
Pages (from-to)2771-2777
Number of pages6
JournalJournal of the American Ceramic Society
Volume85
Issue number11
Publication statusPublished - 2002

Keywords

  • MECHANICAL-PROPERTIES
  • CARBONATE APATITES
  • BONE
  • CERAMICS
  • POWDERS
  • ADDITIVES
  • PHOSPHATE
  • BEHAVIOR

Cite this

Effect of silicon substitution on the sintering and microstructure of hydroxyapatite. / Gibson, Iain Ronald; Best, S. M.; Bonfield, W.

In: Journal of the American Ceramic Society, Vol. 85, No. 11, 2002, p. 2771-2777.

Research output: Contribution to journalArticle

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abstract = "The substitution of between 0 and 1.6 wt{\%} silicon (Si-HA) in hydroxyapatite (HA) inhibited densification at low temperatures (1000degrees-1150degreesC), with these effects being more significant as the level of silicon substitution was increased. For higher sintering temperatures (1200degrees-1300degreesC), the sintered densities of HA and Si-HA compositions were comparable. Examination of the ceramic microstructures by scanning electron microscopy (SEM) showed that silicon substitution also inhibited grain growth at higher sintering temperatures (1200degrees-1300degreesC). The negative effect of silicon substitution on the sintering of HA at low temperatures (1000degrees-1150degreesC) was reflected in the hardness values of the ceramics. However, for higher sintering temperatures, e.g., 1300degreesC, where sintered densities were comparable, the hardness values of Si-HA compositions were equal to or greater than that of HA, reflecting the smaller grain sizes observed for the former.",
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AU - Best, S. M.

AU - Bonfield, W.

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N2 - The substitution of between 0 and 1.6 wt% silicon (Si-HA) in hydroxyapatite (HA) inhibited densification at low temperatures (1000degrees-1150degreesC), with these effects being more significant as the level of silicon substitution was increased. For higher sintering temperatures (1200degrees-1300degreesC), the sintered densities of HA and Si-HA compositions were comparable. Examination of the ceramic microstructures by scanning electron microscopy (SEM) showed that silicon substitution also inhibited grain growth at higher sintering temperatures (1200degrees-1300degreesC). The negative effect of silicon substitution on the sintering of HA at low temperatures (1000degrees-1150degreesC) was reflected in the hardness values of the ceramics. However, for higher sintering temperatures, e.g., 1300degreesC, where sintered densities were comparable, the hardness values of Si-HA compositions were equal to or greater than that of HA, reflecting the smaller grain sizes observed for the former.

AB - The substitution of between 0 and 1.6 wt% silicon (Si-HA) in hydroxyapatite (HA) inhibited densification at low temperatures (1000degrees-1150degreesC), with these effects being more significant as the level of silicon substitution was increased. For higher sintering temperatures (1200degrees-1300degreesC), the sintered densities of HA and Si-HA compositions were comparable. Examination of the ceramic microstructures by scanning electron microscopy (SEM) showed that silicon substitution also inhibited grain growth at higher sintering temperatures (1200degrees-1300degreesC). The negative effect of silicon substitution on the sintering of HA at low temperatures (1000degrees-1150degreesC) was reflected in the hardness values of the ceramics. However, for higher sintering temperatures, e.g., 1300degreesC, where sintered densities were comparable, the hardness values of Si-HA compositions were equal to or greater than that of HA, reflecting the smaller grain sizes observed for the former.

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KW - PHOSPHATE

KW - BEHAVIOR

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