Electrothermal Monte Carlo simulation of submicrometer Si/SiGe MODFETs

Toufik Sadi; Robert W. Kelsall; Neil J. Pilgrim

doi:10.1109/TED.2006.888628

Electrothermal Monte Carlo simulation of submicrometer Si/SiGe MODFETs

Toufik Sadi, Robert W. Kelsall, Neil J. Pilgrim

Physics

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

In this paper, we present results from the simulation of submicrometer Si/SiGe modulation-doped field-effect transistors (MODFETs) using an electrothermal Monte Carlo method. The relationships between the thermal droop effect observed in the electrothermal I-d-V-ds characteristics of the devices and the microscopic properties of electron transport and the temperature profiles are studied. The effects of varying the effective semiconductor die dimensions and the thickness of the SiGe buffers on the electrothermal behavior of the devices are also investigated. A comparison of the electrothermal performance of the simulated Si/SiGe MODFET with that of a GaAs-based HEMT is also carried out.

Original language	English
Pages (from-to)	332-339
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	54
Issue number	2
DOIs	https://doi.org/10.1109/TED.2006.888628
Publication status	Published - Feb 2007

Keywords

device simulations
electrothermal
Monte Carlo (MC)
self-heating
Si/SiGe modulation-doped field-effect transistors (MODFETs)
field-effect transistors
modulation-doped heterostructures
electron-transport
SI/SI1-XGEX heterostructures
mobility
circuits
sige

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10.1109/TED.2006.888628

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title = "Electrothermal Monte Carlo simulation of submicrometer Si/SiGe MODFETs",

abstract = "In this paper, we present results from the simulation of submicrometer Si/SiGe modulation-doped field-effect transistors (MODFETs) using an electrothermal Monte Carlo method. The relationships between the thermal droop effect observed in the electrothermal I-d-V-ds characteristics of the devices and the microscopic properties of electron transport and the temperature profiles are studied. The effects of varying the effective semiconductor die dimensions and the thickness of the SiGe buffers on the electrothermal behavior of the devices are also investigated. A comparison of the electrothermal performance of the simulated Si/SiGe MODFET with that of a GaAs-based HEMT is also carried out.",

keywords = "device simulations, electrothermal, Monte Carlo (MC), self-heating, Si/SiGe modulation-doped field-effect transistors (MODFETs), field-effect transistors, modulation-doped heterostructures, electron-transport, SI/SI1-XGEX heterostructures, mobility, circuits, sige",

author = "Toufik Sadi and Kelsall, {Robert W.} and Pilgrim, {Neil J.}",

year = "2007",

month = feb,

doi = "10.1109/TED.2006.888628",

language = "English",

volume = "54",

pages = "332--339",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Electrothermal Monte Carlo simulation of submicrometer Si/SiGe MODFETs

AU - Sadi, Toufik

AU - Kelsall, Robert W.

AU - Pilgrim, Neil J.

PY - 2007/2

Y1 - 2007/2

N2 - In this paper, we present results from the simulation of submicrometer Si/SiGe modulation-doped field-effect transistors (MODFETs) using an electrothermal Monte Carlo method. The relationships between the thermal droop effect observed in the electrothermal I-d-V-ds characteristics of the devices and the microscopic properties of electron transport and the temperature profiles are studied. The effects of varying the effective semiconductor die dimensions and the thickness of the SiGe buffers on the electrothermal behavior of the devices are also investigated. A comparison of the electrothermal performance of the simulated Si/SiGe MODFET with that of a GaAs-based HEMT is also carried out.

AB - In this paper, we present results from the simulation of submicrometer Si/SiGe modulation-doped field-effect transistors (MODFETs) using an electrothermal Monte Carlo method. The relationships between the thermal droop effect observed in the electrothermal I-d-V-ds characteristics of the devices and the microscopic properties of electron transport and the temperature profiles are studied. The effects of varying the effective semiconductor die dimensions and the thickness of the SiGe buffers on the electrothermal behavior of the devices are also investigated. A comparison of the electrothermal performance of the simulated Si/SiGe MODFET with that of a GaAs-based HEMT is also carried out.

KW - device simulations

KW - electrothermal

KW - Monte Carlo (MC)

KW - self-heating

KW - Si/SiGe modulation-doped field-effect transistors (MODFETs)

KW - field-effect transistors

KW - modulation-doped heterostructures

KW - electron-transport

KW - SI/SI1-XGEX heterostructures

KW - mobility

KW - circuits

KW - sige

U2 - 10.1109/TED.2006.888628

DO - 10.1109/TED.2006.888628

M3 - Article

VL - 54

SP - 332

EP - 339

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 2

ER -

Electrothermal Monte Carlo simulation of submicrometer Si/SiGe MODFETs

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Keywords

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