Electrothermal Monte Carlo simulation of submicron wurtzite GaN/AlGaN HEMTs

Toufik Sadi, Robert W. Kelsall, Neil J. Pilgrim

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

We present results from the simulation of the electrothermal behaviour of submicron wurtzite GaN/AlGaN High Electron Mobility Transistors (HEMTs). The simulator uses an iterative procedure which couples a Monte Carlo simulation with a fast Fourier series solution of the Heat Diffusion Equation (HDE). The results demonstrate the dependence of the extent of the thermal droop observed in the Ids-Vds characteristics and the device peak temperature on the device bias. The paper also investigates the effect of the inclusion of thermal self-consistency on the device microscopic properties and studies the dependence of the device electrothermal characteristics on the type of substrate material used.

Original languageEnglish
Pages (from-to)35-39
Number of pages5
JournalJournal of Computational Electronics
Volume6
Issue number1-3
Early online date9 Dec 2006
DOIs
Publication statusPublished - Sep 2007

Fingerprint

AlGaN
High electron mobility transistors
high electron mobility transistors
wurtzite
Monte Carlo Simulation
Electron
simulation
Fourier series
Self-consistency
Heat Diffusion
Series Solution
Iterative Procedure
Simulators
Diffusion equation
Heat Equation
simulators
Simulator
Inclusion
Substrate
inclusions

Keywords

  • electrothermal
  • Monte Carlo
  • III-N
  • HEMT

Cite this

Electrothermal Monte Carlo simulation of submicron wurtzite GaN/AlGaN HEMTs. / Sadi, Toufik; Kelsall, Robert W.; Pilgrim, Neil J.

In: Journal of Computational Electronics, Vol. 6, No. 1-3, 09.2007, p. 35-39.

Research output: Contribution to journalArticle

Sadi, Toufik ; Kelsall, Robert W. ; Pilgrim, Neil J. / Electrothermal Monte Carlo simulation of submicron wurtzite GaN/AlGaN HEMTs. In: Journal of Computational Electronics. 2007 ; Vol. 6, No. 1-3. pp. 35-39.
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