We present results from the simulation of the electrothermal behaviour of submicron wurtzite GaN/AlGaN High Electron Mobility Transistors (HEMTs). The simulator uses an iterative procedure which couples a Monte Carlo simulation with a fast Fourier series solution of the Heat Diffusion Equation (HDE). The results demonstrate the dependence of the extent of the thermal droop observed in the Ids-Vds characteristics and the device peak temperature on the device bias. The paper also investigates the effect of the inclusion of thermal self-consistency on the device microscopic properties and studies the dependence of the device electrothermal characteristics on the type of substrate material used.
- Monte Carlo