Enhancement of power and frequency in Planar Gunn diodes by introducing extra delta-doping layers

Chong Li, Ata Khalid, Sonia H. Paluchowski Caldwell, Geoffrey Martin Dunn, Martin C. Holland, David R. S. Cumming

Research output: Contribution to journalArticle

10 Citations (Scopus)


Planar Gunn diodes operating above 100 GHz fabricated in GaAs/AlGaAs heterojunction structures with single and double d-doping layers on each side of GaAs channel are numerically studied and experimentally demonstrated. The results show enhanced RF power and oscillation frequency when double d-doping technique was used. By using a two-dimensional numerical simulation tool, the conduction band profile, electron concentration in the epitaxy layers and current-voltage characteristics are investigated. Simulation results indicate that extra d-doping layers increase electron confinement in the conducting channel, therefore higher current levels are obtained. Simulated current-voltage characteristics in both cases agree well with experimental results
Original languageEnglish
Pages (from-to)1624-1626
Number of pages3
JournalMicrowave and Optical Technology Letters
Issue number7
Early online date22 Apr 2011
Publication statusPublished - Jul 2011


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