Enhancement of power and frequency in Planar Gunn diodes by introducing extra delta-doping layers

Chong Li; Ata Khalid; Sonia H. Paluchowski Caldwell; Geoffrey Martin Dunn; Martin C.  Holland; David R. S.  Cumming

doi:10.1002/mop.26071

Enhancement of power and frequency in Planar Gunn diodes by introducing extra delta-doping layers

Chong Li, Ata Khalid, Sonia H. Paluchowski Caldwell, Geoffrey Martin Dunn, Martin C. Holland, David R. S. Cumming

Physics

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Planar Gunn diodes operating above 100 GHz fabricated in GaAs/AlGaAs heterojunction structures with single and double d-doping layers on each side of GaAs channel are numerically studied and experimentally demonstrated. The results show enhanced RF power and oscillation frequency when double d-doping technique was used. By using a two-dimensional numerical simulation tool, the conduction band profile, electron concentration in the epitaxy layers and current-voltage characteristics are investigated. Simulation results indicate that extra d-doping layers increase electron confinement in the conducting channel, therefore higher current levels are obtained. Simulated current-voltage characteristics in both cases agree well with experimental results

Original language	English
Pages (from-to)	1624-1626
Number of pages	3
Journal	Microwave and Optical Technology Letters
Volume	53
Issue number	7
Early online date	22 Apr 2011
DOIs	https://doi.org/10.1002/mop.26071
Publication status	Published - Jul 2011

Access to Document

10.1002/mop.26071

Cite this

@article{7a9e5c573f14445881164d6e7c66e2ad,

title = "Enhancement of power and frequency in Planar Gunn diodes by introducing extra delta-doping layers",

abstract = "Planar Gunn diodes operating above 100 GHz fabricated in GaAs/AlGaAs heterojunction structures with single and double d-doping layers on each side of GaAs channel are numerically studied and experimentally demonstrated. The results show enhanced RF power and oscillation frequency when double d-doping technique was used. By using a two-dimensional numerical simulation tool, the conduction band profile, electron concentration in the epitaxy layers and current-voltage characteristics are investigated. Simulation results indicate that extra d-doping layers increase electron confinement in the conducting channel, therefore higher current levels are obtained. Simulated current-voltage characteristics in both cases agree well with experimental results",

author = "Chong Li and Ata Khalid and {Paluchowski Caldwell}, {Sonia H.} and Dunn, {Geoffrey Martin} and Holland, {Martin C.} and Cumming, {David R. S.}",

year = "2011",

month = jul,

doi = "10.1002/mop.26071",

language = "English",

volume = "53",

pages = "1624--1626",

journal = "Microwave and Optical Technology Letters",

issn = "0895-2477",

publisher = "John Wiley and Sons Inc.",

number = "7",

}

TY - JOUR

T1 - Enhancement of power and frequency in Planar Gunn diodes by introducing extra delta-doping layers

AU - Li, Chong

AU - Khalid, Ata

AU - Paluchowski Caldwell, Sonia H.

AU - Dunn, Geoffrey Martin

AU - Holland, Martin C.

AU - Cumming, David R. S.

PY - 2011/7

Y1 - 2011/7

N2 - Planar Gunn diodes operating above 100 GHz fabricated in GaAs/AlGaAs heterojunction structures with single and double d-doping layers on each side of GaAs channel are numerically studied and experimentally demonstrated. The results show enhanced RF power and oscillation frequency when double d-doping technique was used. By using a two-dimensional numerical simulation tool, the conduction band profile, electron concentration in the epitaxy layers and current-voltage characteristics are investigated. Simulation results indicate that extra d-doping layers increase electron confinement in the conducting channel, therefore higher current levels are obtained. Simulated current-voltage characteristics in both cases agree well with experimental results

AB - Planar Gunn diodes operating above 100 GHz fabricated in GaAs/AlGaAs heterojunction structures with single and double d-doping layers on each side of GaAs channel are numerically studied and experimentally demonstrated. The results show enhanced RF power and oscillation frequency when double d-doping technique was used. By using a two-dimensional numerical simulation tool, the conduction band profile, electron concentration in the epitaxy layers and current-voltage characteristics are investigated. Simulation results indicate that extra d-doping layers increase electron confinement in the conducting channel, therefore higher current levels are obtained. Simulated current-voltage characteristics in both cases agree well with experimental results

U2 - 10.1002/mop.26071

DO - 10.1002/mop.26071

M3 - Article

SN - 0895-2477

VL - 53

SP - 1624

EP - 1626

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 7

ER -

Enhancement of power and frequency in Planar Gunn diodes by introducing extra delta-doping layers

Abstract

Access to Document

Fingerprint

Cite this