Enhancement of power and frequency in Planar Gunn diodes by introducing extra delta-doping layers

Chong Li, Ata Khalid, Sonia H. Paluchowski Caldwell, Geoffrey Martin Dunn, Martin C. Holland, David R. S. Cumming

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Planar Gunn diodes operating above 100 GHz fabricated in GaAs/AlGaAs heterojunction structures with single and double d-doping layers on each side of GaAs channel are numerically studied and experimentally demonstrated. The results show enhanced RF power and oscillation frequency when double d-doping technique was used. By using a two-dimensional numerical simulation tool, the conduction band profile, electron concentration in the epitaxy layers and current-voltage characteristics are investigated. Simulation results indicate that extra d-doping layers increase electron confinement in the conducting channel, therefore higher current levels are obtained. Simulated current-voltage characteristics in both cases agree well with experimental results
Original languageEnglish
Pages (from-to)1624-1626
Number of pages3
JournalMicrowave and Optical Technology Letters
Volume53
Issue number7
Early online date22 Apr 2011
DOIs
Publication statusPublished - Jul 2011

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Gunn diodes
Doping (additives)
Current voltage characteristics
augmentation
Electrons
electric potential
Conduction bands
Epitaxial growth
epitaxy
aluminum gallium arsenides
high current
Heterojunctions
heterojunctions
conduction bands
electrons
simulation
conduction
oscillations
Computer simulation
profiles

Cite this

Enhancement of power and frequency in Planar Gunn diodes by introducing extra delta-doping layers. / Li, Chong; Khalid, Ata; Paluchowski Caldwell, Sonia H.; Dunn, Geoffrey Martin; Holland, Martin C. ; Cumming, David R. S. .

In: Microwave and Optical Technology Letters, Vol. 53, No. 7, 07.2011, p. 1624-1626.

Research output: Contribution to journalArticle

Li, Chong ; Khalid, Ata ; Paluchowski Caldwell, Sonia H. ; Dunn, Geoffrey Martin ; Holland, Martin C. ; Cumming, David R. S. . / Enhancement of power and frequency in Planar Gunn diodes by introducing extra delta-doping layers. In: Microwave and Optical Technology Letters. 2011 ; Vol. 53, No. 7. pp. 1624-1626.
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AU - Holland, Martin C.

AU - Cumming, David R. S.

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