Experimentally estimated dead space for GaAs and InP based planar Gunn diodes

Mohamed Ismaeel Maricar, A Khalid, G Dunn, D. Cumming, C. H. Oxley

Research output: Contribution to journalArticle

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Abstract

An experimental method has been used to estimate the dead space of planar Gunn diodes which were fabricated using GaAs and InP based materials, respectively. The experimental results indicate that the dead space was approximately 0.23 μm and the saturation domain velocity 0.96 × 105 m s−1 for an Al0.23Ga0.77As based device, while for an In0.53Ga0.47As based device, the dead space was approximately 0.21 μm and the saturation domain velocity 1.93 × 105 m s−1. Further, the results suggest that the saturation domain velocity is reduced or there is an increase in the dead-space due to local field distortions when the active channel length of the planar Gunn diode is less than 1 micron.
Original languageEnglish
Article number114502
Number of pages5
JournalSemiconductor Science and Technology
Volume30
Issue number1
DOIs
Publication statusPublished - 28 Nov 2014

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Gunn diodes
saturation
gallium arsenide
estimates

Keywords

  • dead space
  • planar Gunn diode
  • GaAs material
  • InP material

Cite this

Experimentally estimated dead space for GaAs and InP based planar Gunn diodes. / Maricar, Mohamed Ismaeel ; Khalid, A; Dunn, G; Cumming, D.; Oxley, C. H.

In: Semiconductor Science and Technology, Vol. 30, No. 1, 114502, 28.11.2014.

Research output: Contribution to journalArticle

Maricar, Mohamed Ismaeel ; Khalid, A ; Dunn, G ; Cumming, D. ; Oxley, C. H. / Experimentally estimated dead space for GaAs and InP based planar Gunn diodes. In: Semiconductor Science and Technology. 2014 ; Vol. 30, No. 1.
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