Experimentally estimated dead space for GaAs and InP based planar Gunn diodes

Mohamed Ismaeel  Maricar; A Khalid; G Dunn; D. Cumming; C. H. Oxley

doi:10.1088/0268-1242/30/1/012001

Experimentally estimated dead space for GaAs and InP based planar Gunn diodes

Mohamed Ismaeel Maricar, A Khalid, G Dunn, D. Cumming, C. H. Oxley

Physics

De Montfort University

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

8 Downloads (Pure)

Abstract

An experimental method has been used to estimate the dead space of planar Gunn diodes which were fabricated using GaAs and InP based materials, respectively. The experimental results indicate that the dead space was approximately 0.23 μm and the saturation domain velocity 0.96 × 105 m s−1 for an Al0.23Ga0.77As based device, while for an In0.53Ga0.47As based device, the dead space was approximately 0.21 μm and the saturation domain velocity 1.93 × 105 m s−1. Further, the results suggest that the saturation domain velocity is reduced or there is an increase in the dead-space due to local field distortions when the active channel length of the planar Gunn diode is less than 1 micron.

Original language	English
Article number	114502
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	30
Issue number	1
DOIs	https://doi.org/10.1088/0268-1242/30/1/012001
Publication status	Published - 28 Nov 2014

Bibliographical note

The authors would like to thank the staff of the James Watt
Nanofabrication Centre at the University of Glasgow for help
in fabricating the devices which is reported in this paper. ‘Part
of this work was supported by ESPRC through EP/H011862/
1, and EP/H012966/1.

Keywords

dead space
planar Gunn diode
GaAs material
InP material

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Experimentally estimated dead space for GaAs and InP based planar Gunn diodes
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Cite this

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title = "Experimentally estimated dead space for GaAs and InP based planar Gunn diodes",

abstract = "An experimental method has been used to estimate the dead space of planar Gunn diodes which were fabricated using GaAs and InP based materials, respectively. The experimental results indicate that the dead space was approximately 0.23 μm and the saturation domain velocity 0.96 × 105 m s−1 for an Al0.23Ga0.77As based device, while for an In0.53Ga0.47As based device, the dead space was approximately 0.21 μm and the saturation domain velocity 1.93 × 105 m s−1. Further, the results suggest that the saturation domain velocity is reduced or there is an increase in the dead-space due to local field distortions when the active channel length of the planar Gunn diode is less than 1 micron.",

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AU - Maricar, Mohamed Ismaeel

AU - Khalid, A

AU - Dunn, G

AU - Cumming, D.

AU - Oxley, C. H.

N1 - The authors would like to thank the staff of the James Watt Nanofabrication Centre at the University of Glasgow for help in fabricating the devices which is reported in this paper. ‘Part of this work was supported by ESPRC through EP/H011862/ 1, and EP/H012966/1.

PY - 2014/11/28

Y1 - 2014/11/28

N2 - An experimental method has been used to estimate the dead space of planar Gunn diodes which were fabricated using GaAs and InP based materials, respectively. The experimental results indicate that the dead space was approximately 0.23 μm and the saturation domain velocity 0.96 × 105 m s−1 for an Al0.23Ga0.77As based device, while for an In0.53Ga0.47As based device, the dead space was approximately 0.21 μm and the saturation domain velocity 1.93 × 105 m s−1. Further, the results suggest that the saturation domain velocity is reduced or there is an increase in the dead-space due to local field distortions when the active channel length of the planar Gunn diode is less than 1 micron.

AB - An experimental method has been used to estimate the dead space of planar Gunn diodes which were fabricated using GaAs and InP based materials, respectively. The experimental results indicate that the dead space was approximately 0.23 μm and the saturation domain velocity 0.96 × 105 m s−1 for an Al0.23Ga0.77As based device, while for an In0.53Ga0.47As based device, the dead space was approximately 0.21 μm and the saturation domain velocity 1.93 × 105 m s−1. Further, the results suggest that the saturation domain velocity is reduced or there is an increase in the dead-space due to local field distortions when the active channel length of the planar Gunn diode is less than 1 micron.

KW - dead space

KW - planar Gunn diode

KW - GaAs material

KW - InP material

U2 - 10.1088/0268-1242/30/1/012001

DO - 10.1088/0268-1242/30/1/012001

M3 - Article

SN - 0268-1242

VL - 30

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 1

M1 - 114502

ER -

Experimentally estimated dead space for GaAs and InP based planar Gunn diodes

Abstract

Bibliographical note

Keywords

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