GaAs/AlGaAs potential well barrier diodes

Novel diode for detector and mixer applications

Mise Akura, Geoffrey Dunn, James Sexton, Mohamed Missous

Research output: Contribution to journalArticle

2 Citations (Scopus)
6 Downloads (Pure)

Abstract

Heterostructure potential well barrier (PWB) diodes in GaAs/AlGaAs system operating in a similar way to Planar Doped Barrier (PDB) diodes, though exploiting a potential well to trap charge, rather than a fixed doping spike have recently been realized and reported in the literature. This paper analyses the complex operation of these devices and determines the sensitivity of the current–voltage (I–V) characteristics to various design parameters. The PWB diode displays a significant temperature sensitivity, opposite in nature to PDB temperature dependence, and this suggests the possibility of temperature stabilised hybrid designs. The active bias dependence nature of charge within the well is found to have a significant effect on the device and impacts the ideality factor, which is more bias dependent than other comparable devices such as PDBs. However, the same mechanism offers the prospect of improvement in the current asymmetry and this effect can be greatly improved upon by changing the design and shape of the potential well.
Original languageEnglish
Article number1700290
Number of pages7
Journalphysica status solidi (c)
Volume214
Issue number10
Early online date19 Jul 2017
DOIs
Publication statusPublished - Oct 2017

Fingerprint

aluminum gallium arsenides
diodes
detectors
spikes
asymmetry
traps
temperature dependence
temperature
sensitivity

Keywords

  • asymmetry
  • drift-diffusion model
  • ideality factor
  • potential barrier
  • zero-bias detection

Cite this

GaAs/AlGaAs potential well barrier diodes : Novel diode for detector and mixer applications. / Akura, Mise; Dunn, Geoffrey; Sexton, James; Missous, Mohamed.

In: physica status solidi (c), Vol. 214, No. 10, 1700290, 10.2017.

Research output: Contribution to journalArticle

@article{444db05345fb4edaaaf5048a6eb9de63,
title = "GaAs/AlGaAs potential well barrier diodes: Novel diode for detector and mixer applications",
abstract = "Heterostructure potential well barrier (PWB) diodes in GaAs/AlGaAs system operating in a similar way to Planar Doped Barrier (PDB) diodes, though exploiting a potential well to trap charge, rather than a fixed doping spike have recently been realized and reported in the literature. This paper analyses the complex operation of these devices and determines the sensitivity of the current–voltage (I–V) characteristics to various design parameters. The PWB diode displays a significant temperature sensitivity, opposite in nature to PDB temperature dependence, and this suggests the possibility of temperature stabilised hybrid designs. The active bias dependence nature of charge within the well is found to have a significant effect on the device and impacts the ideality factor, which is more bias dependent than other comparable devices such as PDBs. However, the same mechanism offers the prospect of improvement in the current asymmetry and this effect can be greatly improved upon by changing the design and shape of the potential well.",
keywords = "asymmetry, drift-diffusion model, ideality factor, potential barrier, zero-bias detection",
author = "Mise Akura and Geoffrey Dunn and James Sexton and Mohamed Missous",
year = "2017",
month = "10",
doi = "10.1002/pssa.201700290",
language = "English",
volume = "214",
journal = "physica status solidi (c)",
issn = "1610-1634",
publisher = "Wiley-VCH Verlag",
number = "10",

}

TY - JOUR

T1 - GaAs/AlGaAs potential well barrier diodes

T2 - Novel diode for detector and mixer applications

AU - Akura, Mise

AU - Dunn, Geoffrey

AU - Sexton, James

AU - Missous, Mohamed

PY - 2017/10

Y1 - 2017/10

N2 - Heterostructure potential well barrier (PWB) diodes in GaAs/AlGaAs system operating in a similar way to Planar Doped Barrier (PDB) diodes, though exploiting a potential well to trap charge, rather than a fixed doping spike have recently been realized and reported in the literature. This paper analyses the complex operation of these devices and determines the sensitivity of the current–voltage (I–V) characteristics to various design parameters. The PWB diode displays a significant temperature sensitivity, opposite in nature to PDB temperature dependence, and this suggests the possibility of temperature stabilised hybrid designs. The active bias dependence nature of charge within the well is found to have a significant effect on the device and impacts the ideality factor, which is more bias dependent than other comparable devices such as PDBs. However, the same mechanism offers the prospect of improvement in the current asymmetry and this effect can be greatly improved upon by changing the design and shape of the potential well.

AB - Heterostructure potential well barrier (PWB) diodes in GaAs/AlGaAs system operating in a similar way to Planar Doped Barrier (PDB) diodes, though exploiting a potential well to trap charge, rather than a fixed doping spike have recently been realized and reported in the literature. This paper analyses the complex operation of these devices and determines the sensitivity of the current–voltage (I–V) characteristics to various design parameters. The PWB diode displays a significant temperature sensitivity, opposite in nature to PDB temperature dependence, and this suggests the possibility of temperature stabilised hybrid designs. The active bias dependence nature of charge within the well is found to have a significant effect on the device and impacts the ideality factor, which is more bias dependent than other comparable devices such as PDBs. However, the same mechanism offers the prospect of improvement in the current asymmetry and this effect can be greatly improved upon by changing the design and shape of the potential well.

KW - asymmetry

KW - drift-diffusion model

KW - ideality factor

KW - potential barrier

KW - zero-bias detection

U2 - 10.1002/pssa.201700290

DO - 10.1002/pssa.201700290

M3 - Article

VL - 214

JO - physica status solidi (c)

JF - physica status solidi (c)

SN - 1610-1634

IS - 10

M1 - 1700290

ER -