Gunn oscillations in planar heterostructure diodes

N. J. Pilgrim, A. Khalid, G. M. Dunn, D. R. S. Cumming

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

Gunn oscillations have been observed and modelled, using a Monte Carlo method, in planar semiconductor GaAs/AlGaAs heterostructure diodes. Our simulation results support an interpretation of experimental results whereby the Gunn domains travel parallel to the semiconductor layers, as opposed to perpendicular to the layers in traditional vertical devices. Fabricated devices with contact separations of 4 µm down to 1.3 µm have been found to oscillate over a range of frequencies from 24.5 GHz to 108 GHz. These structures offer the prospect of generating frequencies further into the terahertz range and an increased ease of integration and flexibility over equivalent traditional vertical structures.

Original languageEnglish
Article number075013
Number of pages10
JournalSemiconductor Science and Technology
Volume23
Issue number7
Early online date16 May 2008
DOIs
Publication statusPublished - Jul 2008

Keywords

  • Monte-Carlo-simulation
  • power HEMTS
  • GAAS
  • transport
  • semiconductors
  • channel
  • device
  • gap
  • GHZ

Cite this

Gunn oscillations in planar heterostructure diodes. / Pilgrim, N. J.; Khalid, A.; Dunn, G. M.; Cumming, D. R. S.

In: Semiconductor Science and Technology, Vol. 23, No. 7, 075013, 07.2008.

Research output: Contribution to journalArticle

Pilgrim, N. J. ; Khalid, A. ; Dunn, G. M. ; Cumming, D. R. S. / Gunn oscillations in planar heterostructure diodes. In: Semiconductor Science and Technology. 2008 ; Vol. 23, No. 7.
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