Hybrid synchronous DC-DC buck power converter using Si and GaN transistors

Mohammad H. Hedayati; Pallavi Bharadwaj; Vinod John

doi:10.1109/PEDES.2016.7914444

Hybrid synchronous DC-DC buck power converter using Si and GaN transistors

Mohammad H. Hedayati, Pallavi Bharadwaj, Vinod John

Engineering

Indian Institute of Science Bangalore

Research output: Chapter in Book/Report/Conference proceeding › Published conference contribution

3 Citations (Scopus)

Abstract

Usage of power converters in a vast variety of equipments from cellphones, laptops to automobiles, aeroplanes and satellites is increasing. Different synchronous buck converter configurations are considered in this work using Silicon (Si) devices and Gallium Nitride (GaN) devices of equal current ratings. The performance of these converters in terms of power losses and overall efficiency are compared. It is shown that the usage of GaN devices instead of Si devices reduces the power losses and improves the overall efficiency of the power converter. A hybrid synchronous buck converter topology consisting of one Si device and one GaN device is shown to have the lowest rated power loss for switches with similar ratings. The usage of GaN device as active switch and the Si device as synchronous diode is beneficial and has the highest efficiency among the possible converter configurations with an improvement in efficiency by 3-5% for rated conditions.

Original language	English
Title of host publication	IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES), Trivandrum, India
Publisher	IEEE Press
Pages	1-6
Number of pages	6
ISBN (Electronic)	9781467388887
ISBN (Print)	9781467388894
DOIs	https://doi.org/10.1109/PEDES.2016.7914444
Publication status	Published - Dec 2016
Event	2016 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES) - Trivandrum, India Duration: 14 Dec 2016 → 17 Dec 2016 http://www.pedes2016.org

Conference

Conference	2016 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES)
Country/Territory	India
City	Trivandrum
Period	14/12/16 → 17/12/16
Internet address	http://www.pedes2016.org

Bibliographical note

This work is supported by the Department of Electronics and Information Technology, Government of India, under a project titled “Investigation on gallium nitride (GaN) devices for power electronics switching applications and design and development of high frequency GaN converter topology as part of National Mission on Power Electronics Technology phase-II.

Keywords

DC-DC power converters
synchronous operation
Si and GaN power FETs

Access to Document

10.1109/PEDES.2016.7914444Licence: Unspecified

Cite this

Hedayati, MH, Bharadwaj, P & John, V 2016, Hybrid synchronous DC-DC buck power converter using Si and GaN transistors. in IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES), Trivandrum, India. IEEE Press, pp. 1-6, 2016 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES), Trivandrum, India, 14/12/16. https://doi.org/10.1109/PEDES.2016.7914444

@inproceedings{cfad2753723f4e97bdda30007ab5beb3,

title = "Hybrid synchronous DC-DC buck power converter using Si and GaN transistors",

abstract = "Usage of power converters in a vast variety of equipments from cellphones, laptops to automobiles, aeroplanes and satellites is increasing. Different synchronous buck converter configurations are considered in this work using Silicon (Si) devices and Gallium Nitride (GaN) devices of equal current ratings. The performance of these converters in terms of power losses and overall efficiency are compared. It is shown that the usage of GaN devices instead of Si devices reduces the power losses and improves the overall efficiency of the power converter. A hybrid synchronous buck converter topology consisting of one Si device and one GaN device is shown to have the lowest rated power loss for switches with similar ratings. The usage of GaN device as active switch and the Si device as synchronous diode is beneficial and has the highest efficiency among the possible converter configurations with an improvement in efficiency by 3-5% for rated conditions.",

keywords = "DC-DC power converters, synchronous operation, Si and GaN power FETs",

author = "Hedayati, {Mohammad H.} and Pallavi Bharadwaj and Vinod John",

note = "This work is supported by the Department of Electronics and Information Technology, Government of India, under a project titled “Investigation on gallium nitride (GaN) devices for power electronics switching applications and design and development of high frequency GaN converter topology as part of National Mission on Power Electronics Technology phase-II.; 2016 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES) ; Conference date: 14-12-2016 Through 17-12-2016",

year = "2016",

month = dec,

doi = "10.1109/PEDES.2016.7914444",

language = "English",

isbn = "9781467388894",

pages = "1--6",

booktitle = "IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES), Trivandrum, India",

publisher = "IEEE Press",

url = "http://www.pedes2016.org",

}

TY - GEN

T1 - Hybrid synchronous DC-DC buck power converter using Si and GaN transistors

AU - Hedayati, Mohammad H.

AU - Bharadwaj, Pallavi

AU - John, Vinod

N1 - This work is supported by the Department of Electronics and Information Technology, Government of India, under a project titled “Investigation on gallium nitride (GaN) devices for power electronics switching applications and design and development of high frequency GaN converter topology as part of National Mission on Power Electronics Technology phase-II.

PY - 2016/12

Y1 - 2016/12

N2 - Usage of power converters in a vast variety of equipments from cellphones, laptops to automobiles, aeroplanes and satellites is increasing. Different synchronous buck converter configurations are considered in this work using Silicon (Si) devices and Gallium Nitride (GaN) devices of equal current ratings. The performance of these converters in terms of power losses and overall efficiency are compared. It is shown that the usage of GaN devices instead of Si devices reduces the power losses and improves the overall efficiency of the power converter. A hybrid synchronous buck converter topology consisting of one Si device and one GaN device is shown to have the lowest rated power loss for switches with similar ratings. The usage of GaN device as active switch and the Si device as synchronous diode is beneficial and has the highest efficiency among the possible converter configurations with an improvement in efficiency by 3-5% for rated conditions.

AB - Usage of power converters in a vast variety of equipments from cellphones, laptops to automobiles, aeroplanes and satellites is increasing. Different synchronous buck converter configurations are considered in this work using Silicon (Si) devices and Gallium Nitride (GaN) devices of equal current ratings. The performance of these converters in terms of power losses and overall efficiency are compared. It is shown that the usage of GaN devices instead of Si devices reduces the power losses and improves the overall efficiency of the power converter. A hybrid synchronous buck converter topology consisting of one Si device and one GaN device is shown to have the lowest rated power loss for switches with similar ratings. The usage of GaN device as active switch and the Si device as synchronous diode is beneficial and has the highest efficiency among the possible converter configurations with an improvement in efficiency by 3-5% for rated conditions.

KW - DC-DC power converters

KW - synchronous operation

KW - Si and GaN power FETs

U2 - 10.1109/PEDES.2016.7914444

DO - 10.1109/PEDES.2016.7914444

M3 - Published conference contribution

SN - 9781467388894

SP - 1

EP - 6

BT - IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES), Trivandrum, India

PB - IEEE Press

T2 - 2016 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES)

Y2 - 14 December 2016 through 17 December 2016

ER -

Hybrid synchronous DC-DC buck power converter using Si and GaN transistors

Abstract

Conference

Bibliographical note

Keywords

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Cite this