Hybrid synchronous DC-DC buck power converter using Si and GaN transistors

Mohammad H. Hedayati, Pallavi Bharadwaj, Vinod John

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Usage of power converters in a vast variety of equipments from cellphones, laptops to automobiles, aeroplanes and satellites is increasing. Different synchronous buck converter configurations are considered in this work using Silicon (Si) devices and Gallium Nitride (GaN) devices of equal current ratings. The performance of these converters in terms of power losses and overall efficiency are compared. It is shown that the usage of GaN devices instead of Si devices reduces the power losses and improves the overall efficiency of the power converter. A hybrid synchronous buck converter topology consisting of one Si device and one GaN device is shown to have the lowest rated power loss for switches with similar ratings. The usage of GaN device as active switch and the Si device as synchronous diode is beneficial and has the highest efficiency among the possible converter configurations with an improvement in efficiency by 3-5% for rated conditions.
Original languageEnglish
Title of host publicationIEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES), Trivandrum, India
PublisherIEEE Press
Pages1-6
Number of pages6
ISBN (Electronic)9781467388887
ISBN (Print)9781467388894
DOIs
Publication statusPublished - Dec 2016
Event2016 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES) - Trivandrum, India
Duration: 14 Dec 201617 Dec 2016
http://www.pedes2016.org

Conference

Conference2016 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES)
CountryIndia
CityTrivandrum
Period14/12/1617/12/16
Internet address

Fingerprint

Gallium nitride
DC-DC converters
Silicon nitride
Transistors
Silicon
Power converters
Switches
Automobiles
Diodes
Aircraft
Topology
Satellites

Keywords

  • DC-DC power converters
  • synchronous operation
  • Si and GaN power FETs

Cite this

Hedayati, M. H., Bharadwaj, P., & John, V. (2016). Hybrid synchronous DC-DC buck power converter using Si and GaN transistors. In IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES), Trivandrum, India (pp. 1-6). IEEE Press. https://doi.org/10.1109/PEDES.2016.7914444

Hybrid synchronous DC-DC buck power converter using Si and GaN transistors. / Hedayati, Mohammad H.; Bharadwaj, Pallavi; John, Vinod.

IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES), Trivandrum, India. IEEE Press, 2016. p. 1-6.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hedayati, MH, Bharadwaj, P & John, V 2016, Hybrid synchronous DC-DC buck power converter using Si and GaN transistors. in IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES), Trivandrum, India. IEEE Press, pp. 1-6, 2016 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES), Trivandrum, India, 14/12/16. https://doi.org/10.1109/PEDES.2016.7914444
Hedayati MH, Bharadwaj P, John V. Hybrid synchronous DC-DC buck power converter using Si and GaN transistors. In IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES), Trivandrum, India. IEEE Press. 2016. p. 1-6 https://doi.org/10.1109/PEDES.2016.7914444
Hedayati, Mohammad H. ; Bharadwaj, Pallavi ; John, Vinod. / Hybrid synchronous DC-DC buck power converter using Si and GaN transistors. IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES), Trivandrum, India. IEEE Press, 2016. pp. 1-6
@inproceedings{cfad2753723f4e97bdda30007ab5beb3,
title = "Hybrid synchronous DC-DC buck power converter using Si and GaN transistors",
abstract = "Usage of power converters in a vast variety of equipments from cellphones, laptops to automobiles, aeroplanes and satellites is increasing. Different synchronous buck converter configurations are considered in this work using Silicon (Si) devices and Gallium Nitride (GaN) devices of equal current ratings. The performance of these converters in terms of power losses and overall efficiency are compared. It is shown that the usage of GaN devices instead of Si devices reduces the power losses and improves the overall efficiency of the power converter. A hybrid synchronous buck converter topology consisting of one Si device and one GaN device is shown to have the lowest rated power loss for switches with similar ratings. The usage of GaN device as active switch and the Si device as synchronous diode is beneficial and has the highest efficiency among the possible converter configurations with an improvement in efficiency by 3-5{\%} for rated conditions.",
keywords = "DC-DC power converters, synchronous operation, Si and GaN power FETs",
author = "Hedayati, {Mohammad H.} and Pallavi Bharadwaj and Vinod John",
note = "This work is supported by the Department of Electronics and Information Technology, Government of India, under a project titled “Investigation on gallium nitride (GaN) devices for power electronics switching applications and design and development of high frequency GaN converter topology as part of National Mission on Power Electronics Technology phase-II.",
year = "2016",
month = "12",
doi = "10.1109/PEDES.2016.7914444",
language = "English",
isbn = "9781467388894",
pages = "1--6",
booktitle = "IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES), Trivandrum, India",
publisher = "IEEE Press",

}

TY - GEN

T1 - Hybrid synchronous DC-DC buck power converter using Si and GaN transistors

AU - Hedayati, Mohammad H.

AU - Bharadwaj, Pallavi

AU - John, Vinod

N1 - This work is supported by the Department of Electronics and Information Technology, Government of India, under a project titled “Investigation on gallium nitride (GaN) devices for power electronics switching applications and design and development of high frequency GaN converter topology as part of National Mission on Power Electronics Technology phase-II.

PY - 2016/12

Y1 - 2016/12

N2 - Usage of power converters in a vast variety of equipments from cellphones, laptops to automobiles, aeroplanes and satellites is increasing. Different synchronous buck converter configurations are considered in this work using Silicon (Si) devices and Gallium Nitride (GaN) devices of equal current ratings. The performance of these converters in terms of power losses and overall efficiency are compared. It is shown that the usage of GaN devices instead of Si devices reduces the power losses and improves the overall efficiency of the power converter. A hybrid synchronous buck converter topology consisting of one Si device and one GaN device is shown to have the lowest rated power loss for switches with similar ratings. The usage of GaN device as active switch and the Si device as synchronous diode is beneficial and has the highest efficiency among the possible converter configurations with an improvement in efficiency by 3-5% for rated conditions.

AB - Usage of power converters in a vast variety of equipments from cellphones, laptops to automobiles, aeroplanes and satellites is increasing. Different synchronous buck converter configurations are considered in this work using Silicon (Si) devices and Gallium Nitride (GaN) devices of equal current ratings. The performance of these converters in terms of power losses and overall efficiency are compared. It is shown that the usage of GaN devices instead of Si devices reduces the power losses and improves the overall efficiency of the power converter. A hybrid synchronous buck converter topology consisting of one Si device and one GaN device is shown to have the lowest rated power loss for switches with similar ratings. The usage of GaN device as active switch and the Si device as synchronous diode is beneficial and has the highest efficiency among the possible converter configurations with an improvement in efficiency by 3-5% for rated conditions.

KW - DC-DC power converters

KW - synchronous operation

KW - Si and GaN power FETs

U2 - 10.1109/PEDES.2016.7914444

DO - 10.1109/PEDES.2016.7914444

M3 - Conference contribution

SN - 9781467388894

SP - 1

EP - 6

BT - IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES), Trivandrum, India

PB - IEEE Press

ER -