Investigating effect of temperature on barrier height of PWB diodes

M. Akura; G. M. Dunn

doi:10.1049/el.2017.3353

Investigating effect of temperature on barrier height of PWB diodes

M. Akura^*, G. M. Dunn

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

13 Downloads (Pure)

Abstract

The effect of temperature on the barrier height of a gallium arsenide (GaAs)/aluminium GaAs (AlGaAs) potential-well barrier (PWB) diodes is investigated and reported in this Letter. It was found that more electrons diffuse from the doped AlGaAs(silicon) into the undoped layers with increasing temperature, this modifies the electric field along these layers and hence the barrier height. The barrier height increases with increasing temperature at an increasing rate of 0.093–0.36meV/K in the temperature range of 200–380 K in a similar way to the planar-doped barrier (PDB) diode. The result of the computer simulations, however, shows that the PWB diode is less sensitive than the PDB diode due to the active nature of the charge in the well.

Original language	English
Article number	el.2017.3353
Pages (from-to)	42-43
Number of pages	2
Journal	Electronics Letters
Volume	54
Issue number	1
Early online date	21 Nov 2017
DOIs	https://doi.org/10.1049/el.2017.3353
Publication status	Published - 11 Jan 2018

Access to Document

10.1049/el.2017.3353Licence: Unspecified

Electronics Letters
© © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Accepted author manuscript, 46.6 KBLicence: Other

Cite this

@article{6aaf0331737e467f99f2aaaf154dd2b4,

title = "Investigating effect of temperature on barrier height of PWB diodes",

abstract = "The effect of temperature on the barrier height of a gallium arsenide (GaAs)/aluminium GaAs (AlGaAs) potential-well barrier (PWB) diodes is investigated and reported in this Letter. It was found that more electrons diffuse from the doped AlGaAs(silicon) into the undoped layers with increasing temperature, this modifies the electric field along these layers and hence the barrier height. The barrier height increases with increasing temperature at an increasing rate of 0.093–0.36meV/K in the temperature range of 200–380 K in a similar way to the planar-doped barrier (PDB) diode. The result of the computer simulations, however, shows that the PWB diode is less sensitive than the PDB diode due to the active nature of the charge in the well.",

author = "M. Akura and Dunn, {G. M.}",

year = "2018",

month = jan,

day = "11",

doi = "10.1049/el.2017.3353",

language = "English",

volume = "54",

pages = "42--43",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Wiley",

number = "1",

}

TY - JOUR

T1 - Investigating effect of temperature on barrier height of PWB diodes

AU - Akura, M.

AU - Dunn, G. M.

PY - 2018/1/11

Y1 - 2018/1/11

N2 - The effect of temperature on the barrier height of a gallium arsenide (GaAs)/aluminium GaAs (AlGaAs) potential-well barrier (PWB) diodes is investigated and reported in this Letter. It was found that more electrons diffuse from the doped AlGaAs(silicon) into the undoped layers with increasing temperature, this modifies the electric field along these layers and hence the barrier height. The barrier height increases with increasing temperature at an increasing rate of 0.093–0.36meV/K in the temperature range of 200–380 K in a similar way to the planar-doped barrier (PDB) diode. The result of the computer simulations, however, shows that the PWB diode is less sensitive than the PDB diode due to the active nature of the charge in the well.

AB - The effect of temperature on the barrier height of a gallium arsenide (GaAs)/aluminium GaAs (AlGaAs) potential-well barrier (PWB) diodes is investigated and reported in this Letter. It was found that more electrons diffuse from the doped AlGaAs(silicon) into the undoped layers with increasing temperature, this modifies the electric field along these layers and hence the barrier height. The barrier height increases with increasing temperature at an increasing rate of 0.093–0.36meV/K in the temperature range of 200–380 K in a similar way to the planar-doped barrier (PDB) diode. The result of the computer simulations, however, shows that the PWB diode is less sensitive than the PDB diode due to the active nature of the charge in the well.

U2 - 10.1049/el.2017.3353

DO - 10.1049/el.2017.3353

M3 - Article

SN - 0013-5194

VL - 54

SP - 42

EP - 43

JO - Electronics Letters

JF - Electronics Letters

IS - 1

M1 - el.2017.3353

ER -

Investigating effect of temperature on barrier height of PWB diodes

Abstract

Access to Document

Fingerprint

Cite this