Investigating the role of band offset on the property and op-eration of the potential well barrier diodes

Mise Akura; Geoffrey Dunn

doi:10.1002/pssb.201800284

Investigating the role of band offset on the property and op-eration of the potential well barrier diodes

Mise Akura^* (Corresponding Author), Geoffrey Dunn

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

4 Downloads (Pure)

Abstract

Carrier dynamics in a Potential Well Barrier (PWB) diode has been explored and demonstrated in this paper. Three heterostructures in the GaAs/AlGaAs system namely, and with corresponding band offsets of 0.1, 0.25 and 0.30 eV respectively were investigated us-ing the drift-diffusion (DD) and Monte Carlo (MC) mod-els. The behaviour of the diodes with different band off-sets were compared in terms of mean electron velocity, mean electron energy and density of charge along the in-trinsic regions and in the potential well. The MC simula-tion model enables the effect of space-charge injection and carrier heating which were not included in previous study of these structures be treated quantitatively. Significant dif-ferences exist in the behaviour of the three heterojunctions as this impacts the curvature coefficient and

ideality factor of diode. Both the ideality factor and curva-ture coefficient reflect the magnitude of band offset of the heterojunctions (interface).

Original language	English
Article number	1800284
Journal	physica status solidi (c)
Volume	256
Issue number	5
Early online date	9 Jan 2019
DOIs	https://doi.org/10.1002/pssb.201800284
Publication status	Published - May 2019

Bibliographical note

We gratefully acknowledge the School of Natural and Computing Sciences (SNCS), College of Physical Sciences, University of Aberdeen, UK for providing fund to support this work

Keywords

band offset
heterostructure
orthophosphoric etching
carrier heating
curvature coefficient
heterostructures

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10.1002/pssb.201800284Licence: Unspecified

Accepted Manuscript
This is the accepted version of the following article: Akura, M. and Dunn, G. (2019), Investigating the Role of Band Offset on the Property and Operation of the Potential Well Barrier Diodes. Phys. Status Solidi B, 256: 1800284., which has been published in final form at https://doi.org/10.1002/pssb.201800284. This article may be used for non-commercial purposes in accordance with the Wiley Self Archiving Policy [http://www.wileyauthors.com/self-archiving].
Accepted author manuscript, 598 KBLicence: Unspecified

Cite this

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title = "Investigating the role of band offset on the property and op-eration of the potential well barrier diodes",

abstract = "Carrier dynamics in a Potential Well Barrier (PWB) diode has been explored and demonstrated in this paper. Three heterostructures in the GaAs/AlGaAs system namely, and with corresponding band offsets of 0.1, 0.25 and 0.30 eV respectively were investigated us-ing the drift-diffusion (DD) and Monte Carlo (MC) mod-els. The behaviour of the diodes with different band off-sets were compared in terms of mean electron velocity, mean electron energy and density of charge along the in-trinsic regions and in the potential well. The MC simula-tion model enables the effect of space-charge injection and carrier heating which were not included in previous study of these structures be treated quantitatively. Significant dif-ferences exist in the behaviour of the three heterojunctions as this impacts the curvature coefficient and ideality factor of diode. Both the ideality factor and curva-ture coefficient reflect the magnitude of band offset of the heterojunctions (interface). ",

keywords = "band offset, heterostructure, orthophosphoric etching, carrier heating, curvature coefficient, heterostructures",

author = "Mise Akura and Geoffrey Dunn",

note = "We gratefully acknowledge the School of Natural and Computing Sciences (SNCS), College of Physical Sciences, University of Aberdeen, UK for providing fund to support this work",

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AU - Akura, Mise

AU - Dunn, Geoffrey

N1 - We gratefully acknowledge the School of Natural and Computing Sciences (SNCS), College of Physical Sciences, University of Aberdeen, UK for providing fund to support this work

PY - 2019/5

Y1 - 2019/5

N2 - Carrier dynamics in a Potential Well Barrier (PWB) diode has been explored and demonstrated in this paper. Three heterostructures in the GaAs/AlGaAs system namely, and with corresponding band offsets of 0.1, 0.25 and 0.30 eV respectively were investigated us-ing the drift-diffusion (DD) and Monte Carlo (MC) mod-els. The behaviour of the diodes with different band off-sets were compared in terms of mean electron velocity, mean electron energy and density of charge along the in-trinsic regions and in the potential well. The MC simula-tion model enables the effect of space-charge injection and carrier heating which were not included in previous study of these structures be treated quantitatively. Significant dif-ferences exist in the behaviour of the three heterojunctions as this impacts the curvature coefficient and ideality factor of diode. Both the ideality factor and curva-ture coefficient reflect the magnitude of band offset of the heterojunctions (interface).

AB - Carrier dynamics in a Potential Well Barrier (PWB) diode has been explored and demonstrated in this paper. Three heterostructures in the GaAs/AlGaAs system namely, and with corresponding band offsets of 0.1, 0.25 and 0.30 eV respectively were investigated us-ing the drift-diffusion (DD) and Monte Carlo (MC) mod-els. The behaviour of the diodes with different band off-sets were compared in terms of mean electron velocity, mean electron energy and density of charge along the in-trinsic regions and in the potential well. The MC simula-tion model enables the effect of space-charge injection and carrier heating which were not included in previous study of these structures be treated quantitatively. Significant dif-ferences exist in the behaviour of the three heterojunctions as this impacts the curvature coefficient and ideality factor of diode. Both the ideality factor and curva-ture coefficient reflect the magnitude of band offset of the heterojunctions (interface).

KW - band offset

KW - heterostructure

KW - orthophosphoric etching

KW - carrier heating

KW - curvature coefficient

KW - heterostructures

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UR - http://www.mendeley.com/research/investigating-role-band-offset-property-operation-potential-barrier-diodes

U2 - 10.1002/pssb.201800284

DO - 10.1002/pssb.201800284

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SN - 1610-1634

VL - 256

JO - physica status solidi (c)

JF - physica status solidi (c)

IS - 5

M1 - 1800284

ER -

Investigating the role of band offset on the property and op-eration of the potential well barrier diodes

Abstract

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Keywords

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