Investigating the role of band offset on the property and op-eration of the potential well barrier diodes

Mise Akura (Corresponding Author), Geoffrey Dunn

Research output: Contribution to journalArticle

2 Citations (Scopus)
2 Downloads (Pure)

Abstract

Carrier dynamics in a Potential Well Barrier (PWB) diode has been explored and demonstrated in this paper. Three heterostructures in the GaAs/AlGaAs system namely, and with corresponding band offsets of 0.1, 0.25 and 0.30 eV respectively were investigated us-ing the drift-diffusion (DD) and Monte Carlo (MC) mod-els. The behaviour of the diodes with different band off-sets were compared in terms of mean electron velocity, mean electron energy and density of charge along the in-trinsic regions and in the potential well. The MC simula-tion model enables the effect of space-charge injection and carrier heating which were not included in previous study of these structures be treated quantitatively. Significant dif-ferences exist in the behaviour of the three heterojunctions as this impacts the curvature coefficient and













ideality factor of diode. Both the ideality factor and curva-ture coefficient reflect the magnitude of band offset of the heterojunctions (interface).

Original languageEnglish
Article number1800284
Journalphysica status solidi (c)
Volume256
Issue number5
Early online date9 Jan 2019
DOIs
Publication statusPublished - May 2019

Keywords

  • band offset
  • heterostructure
  • orthophosphoric etching
  • carrier heating
  • curvature coefficient
  • heterostructures

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