Investigation of High-Frequency Fine Structure in the Current Output of Shaped Contact Planar Gunn Diodes

Geoffrey Dunn; Ahmed Mohammed H. Mindil; A. Khalid; Chris Oxley

doi:10.1109/TED.2020.2981191

Investigation of High-Frequency Fine Structure in the Current Output of Shaped Contact Planar Gunn Diodes

Geoffrey Dunn, Ahmed Mohammed H. Mindil, A. Khalid, Chris Oxley

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Abstract

A novel gallium arsenide (GaAs) planar Gunn diode design with shaped anode and cathode contacts using Monte Carlo simulations has been shown to produce significantly higher frequency fine structure components in the output waveform than the natural transit time frequency of the diode. We have investigated devices without a feedback potential and devices with a feedback potential (in the delayed mode) and have shown 350-GHz fine structure frequency components in a device with a nominal transit time frequency of 70 GHz is possible. This is the first observation of such stable repeating high-frequency components in a Gunn diode, giving potential for very high-frequency power generation and other wave-shaping applications.

Original language	English
Article number	9061165
Pages (from-to)	1946-1951
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	67
Issue number	5
Early online date	8 Apr 2020
DOIs	https://doi.org/10.1109/TED.2020.2981191
Publication status	Published - May 2020

Keywords

Gallium arsenide (GaAs)
high frequency
Monte Carlo
multiple peaks
planar Gunn diode
CHANNEL
TRANSFERRED ELECTRON DEVICES
SIMULATION
GAAS

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abstract = "A novel gallium arsenide (GaAs) planar Gunn diode design with shaped anode and cathode contacts using Monte Carlo simulations has been shown to produce significantly higher frequency fine structure components in the output waveform than the natural transit time frequency of the diode. We have investigated devices without a feedback potential and devices with a feedback potential (in the delayed mode) and have shown 350-GHz fine structure frequency components in a device with a nominal transit time frequency of 70 GHz is possible. This is the first observation of such stable repeating high-frequency components in a Gunn diode, giving potential for very high-frequency power generation and other wave-shaping applications.",

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AB - A novel gallium arsenide (GaAs) planar Gunn diode design with shaped anode and cathode contacts using Monte Carlo simulations has been shown to produce significantly higher frequency fine structure components in the output waveform than the natural transit time frequency of the diode. We have investigated devices without a feedback potential and devices with a feedback potential (in the delayed mode) and have shown 350-GHz fine structure frequency components in a device with a nominal transit time frequency of 70 GHz is possible. This is the first observation of such stable repeating high-frequency components in a Gunn diode, giving potential for very high-frequency power generation and other wave-shaping applications.

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Investigation of High-Frequency Fine Structure in the Current Output of Shaped Contact Planar Gunn Diodes

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