Investigation of High-Frequency Fine Structure in the Current Output of Shaped Contact Planar Gunn Diodes

Geoffrey Dunn, Ahmed Mohammed H. Mindil, A. Khalid, Chris Oxley

Research output: Contribution to journalArticle

1 Downloads (Pure)

Abstract

A novel gallium arsenide (GaAs) planar Gunn diode design with shaped anode and cathode contacts using Monte Carlo simulations has been shown to produce significantly higher frequency fine structure components in the output waveform than the natural transit time frequency of the diode. We have investigated devices without a feedback potential and devices with a feedback potential (in the delayed mode) and have shown 350-GHz fine structure frequency components in a device with a nominal transit time frequency of 70 GHz is possible. This is the first observation of such stable repeating high-frequency components in a Gunn diode, giving potential for very high-frequency power generation and other wave-shaping applications.
Original languageEnglish
Article number9061165
Pages (from-to)1946-1951
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume67
Issue number5
Early online date8 Apr 2020
DOIs
Publication statusPublished - May 2020

Keywords

  • Gallium arsenide (GaAs)
  • high frequency
  • Monte Carlo
  • multiple peaks
  • planar Gunn diode
  • CHANNEL
  • TRANSFERRED ELECTRON DEVICES
  • SIMULATION
  • GAAS

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Investigation of High-Frequency Fine Structure in the Current Output of Shaped Contact Planar Gunn Diodes'. Together they form a unique fingerprint.

  • Cite this