Investigation of self-heating effects in submicrometer GaN/AlGaN HEMTs using an electrothermal Monte Carlo method

Toufik Sadi, Robert W. Kelsall, Neil J. Pilgrim

Research output: Contribution to journalArticle

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Abstract

An electrothermal Monte Carlo (MC) method is applied in this paper to investigate electron transport in submicrometer wurtzite GaN/AlGaN high-electron mobility transistors (HEMTs) grown on various substrate materials including SiC, Si, GaN, and sapphire. The simulation method is an iterative technique that alternately runs an MC electronic simulation and solves the heat diffusion equation using an analytical thermal resistance matrix method. Results demonstrate how the extent of the thermal droop in the I-d-V-ds characteristics and the device peak temperature depend upon both the biasing conditions and the substrate material type. Polarization effects are considered in the simulations, as they greatly influence electron transport in GaN/AlGaN HEMTs by creating a highly concentrated two-dimensional electron gas (2DEG) at the GaN/AlGaN interface. It is shown that a higher 2DEG density provides the devices with a better current handling capability but also increases the importance of the thermal effects.

Original languageEnglish
Pages (from-to)2892-2900
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume53
Issue number12
DOIs
Publication statusPublished - Dec 2006

Keywords

  • electrothermal simulations
  • III-N
  • Monte Carlo (MC)
  • wurtzite GaN/AlGaN high-electron mobility transistors
  • (HEMTs)
  • field-effect transistors
  • electron-transport
  • GAN
  • channel
  • mobility
  • simulation
  • phonon
  • model

Cite this

Investigation of self-heating effects in submicrometer GaN/AlGaN HEMTs using an electrothermal Monte Carlo method. / Sadi, Toufik; Kelsall, Robert W.; Pilgrim, Neil J.

In: IEEE Transactions on Electron Devices, Vol. 53, No. 12, 12.2006, p. 2892-2900.

Research output: Contribution to journalArticle

Sadi, Toufik ; Kelsall, Robert W. ; Pilgrim, Neil J. / Investigation of self-heating effects in submicrometer GaN/AlGaN HEMTs using an electrothermal Monte Carlo method. In: IEEE Transactions on Electron Devices. 2006 ; Vol. 53, No. 12. pp. 2892-2900.
@article{a66a291540274297be162edd070b0196,
title = "Investigation of self-heating effects in submicrometer GaN/AlGaN HEMTs using an electrothermal Monte Carlo method",
abstract = "An electrothermal Monte Carlo (MC) method is applied in this paper to investigate electron transport in submicrometer wurtzite GaN/AlGaN high-electron mobility transistors (HEMTs) grown on various substrate materials including SiC, Si, GaN, and sapphire. The simulation method is an iterative technique that alternately runs an MC electronic simulation and solves the heat diffusion equation using an analytical thermal resistance matrix method. Results demonstrate how the extent of the thermal droop in the I-d-V-ds characteristics and the device peak temperature depend upon both the biasing conditions and the substrate material type. Polarization effects are considered in the simulations, as they greatly influence electron transport in GaN/AlGaN HEMTs by creating a highly concentrated two-dimensional electron gas (2DEG) at the GaN/AlGaN interface. It is shown that a higher 2DEG density provides the devices with a better current handling capability but also increases the importance of the thermal effects.",
keywords = "electrothermal simulations, III-N, Monte Carlo (MC), wurtzite GaN/AlGaN high-electron mobility transistors, (HEMTs), field-effect transistors, electron-transport, GAN, channel, mobility, simulation, phonon, model",
author = "Toufik Sadi and Kelsall, {Robert W.} and Pilgrim, {Neil J.}",
year = "2006",
month = "12",
doi = "10.1109/TED.2006.885099",
language = "English",
volume = "53",
pages = "2892--2900",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",

}

TY - JOUR

T1 - Investigation of self-heating effects in submicrometer GaN/AlGaN HEMTs using an electrothermal Monte Carlo method

AU - Sadi, Toufik

AU - Kelsall, Robert W.

AU - Pilgrim, Neil J.

PY - 2006/12

Y1 - 2006/12

N2 - An electrothermal Monte Carlo (MC) method is applied in this paper to investigate electron transport in submicrometer wurtzite GaN/AlGaN high-electron mobility transistors (HEMTs) grown on various substrate materials including SiC, Si, GaN, and sapphire. The simulation method is an iterative technique that alternately runs an MC electronic simulation and solves the heat diffusion equation using an analytical thermal resistance matrix method. Results demonstrate how the extent of the thermal droop in the I-d-V-ds characteristics and the device peak temperature depend upon both the biasing conditions and the substrate material type. Polarization effects are considered in the simulations, as they greatly influence electron transport in GaN/AlGaN HEMTs by creating a highly concentrated two-dimensional electron gas (2DEG) at the GaN/AlGaN interface. It is shown that a higher 2DEG density provides the devices with a better current handling capability but also increases the importance of the thermal effects.

AB - An electrothermal Monte Carlo (MC) method is applied in this paper to investigate electron transport in submicrometer wurtzite GaN/AlGaN high-electron mobility transistors (HEMTs) grown on various substrate materials including SiC, Si, GaN, and sapphire. The simulation method is an iterative technique that alternately runs an MC electronic simulation and solves the heat diffusion equation using an analytical thermal resistance matrix method. Results demonstrate how the extent of the thermal droop in the I-d-V-ds characteristics and the device peak temperature depend upon both the biasing conditions and the substrate material type. Polarization effects are considered in the simulations, as they greatly influence electron transport in GaN/AlGaN HEMTs by creating a highly concentrated two-dimensional electron gas (2DEG) at the GaN/AlGaN interface. It is shown that a higher 2DEG density provides the devices with a better current handling capability but also increases the importance of the thermal effects.

KW - electrothermal simulations

KW - III-N

KW - Monte Carlo (MC)

KW - wurtzite GaN/AlGaN high-electron mobility transistors

KW - (HEMTs)

KW - field-effect transistors

KW - electron-transport

KW - GAN

KW - channel

KW - mobility

KW - simulation

KW - phonon

KW - model

U2 - 10.1109/TED.2006.885099

DO - 10.1109/TED.2006.885099

M3 - Article

VL - 53

SP - 2892

EP - 2900

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 12

ER -