Modulating quantum transport by transient chaos

Rui Yang, Liang Huang, Ying-Cheng Lai, Louis M. Pecora

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27 Citations (Scopus)

Abstract

We propose a scheme to modulate quantum transport in nanostructures based on classical chaos. By applying external gate voltage to generate a classically forbidden region, transient chaos can be generated, and the escape rate associated with the underlying non-attracting chaotic set can be varied continuously by adjusting the gate voltage. We demonstrate that this can effectively modulate the quantum conductance-fluctuation patterns. A theory based on self-energies and the spectrum of the generalized non-Hermitian Hamiltonian of the open quantum system is developed to understand the modulation mechanism. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3690046]

Original languageEnglish
Article number093105
Number of pages4
JournalApplied Physics Letters
Volume100
Issue number9
DOIs
Publication statusPublished - 27 Feb 2012

Keywords

  • chaos
  • electrical conductivity
  • nanostructured materials
  • quantum dots
  • conductance fluctuations
  • systems
  • eigenfunctions
  • orbits
  • scars

Cite this

Yang, R., Huang, L., Lai, Y-C., & Pecora, L. M. (2012). Modulating quantum transport by transient chaos. Applied Physics Letters, 100(9), [093105]. https://doi.org/10.1063/1.3690046