Monte Carlo Modelling of multiple-transit-region Gunn diodes

Y. P. Teoh, Geoffrey Martin Dunn, N. Priestley, M. Carr

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Our Monte Carlo model shows that the incorporation of multiple transit regions into a single Gunn device is a feasible means of increasing the output power of the device. From our simulations, the power attainable from these multiple-transit-region Gunn diodes increases linearly with the square of the number of transit regions, while the efficiency remains approximately the same. We have found that the coherent transfer of domains occurs in all the investigated devices (up to eight transit regions). There seems to be no obvious upper limit to the number of transit regions that can be incorporated into a single device (in the absence of thermal limitations).

Original languageEnglish
Pages (from-to)1090-1095
Number of pages5
JournalSemiconductor Science and Technology
Volume17
DOIs
Publication statusPublished - 2002

Keywords

  • GAAS
  • OSCILLATOR
  • OPERATION
  • DESIGN

Cite this

Monte Carlo Modelling of multiple-transit-region Gunn diodes. / Teoh, Y. P.; Dunn, Geoffrey Martin; Priestley, N.; Carr, M.

In: Semiconductor Science and Technology, Vol. 17, 2002, p. 1090-1095.

Research output: Contribution to journalArticle

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