Monte Carlo simulation of high-field transport and impact ionization in AlGaAs p(+)in(+) diodes

G M  Dunn; R  Ghin; G J  Rees; J P R  David; S  Plimmer; D C  Herbert

Monte Carlo simulation of high-field transport and impact ionization in AlGaAs p(+)in(+) diodes

G M Dunn, R Ghin, G J Rees, J P R David, S Plimmer, D C Herbert

Physics

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

We have used Monte Carlo simulation methods employing both realistic band structure and a simpler analytical approximation to investigate impact ionization in bulk AlxGa1-xAs and also submicron p(+)in(+) diodes for x less than or equal to 40%. The calculated impact ionization rates in bulk AlxGa1-xAs compared well with previous experiments and the electron- and hole-initiated current multiplication characteristics of the p(+)in(+) diodes were found to agree very well with our experimental results for both the analytical and the numerical models.

Original language	English
Pages (from-to)	994-1000
Number of pages	7
Journal	Semiconductor Science and Technology
Volume	14
Publication status	Published - 1999

Keywords

LUCKY-DRIFT THEORY
AVALANCHE PHOTODIODES
SILICON
GAAS
MODEL
HOLE
SEMICONDUCTORS
BREAKDOWN
ELECTRON
ALXGA1-XAS

Cite this

@article{399fa9fba56f4e1c8e69160cbebaa35d,

title = "Monte Carlo simulation of high-field transport and impact ionization in AlGaAs p(+)in(+) diodes",

abstract = "We have used Monte Carlo simulation methods employing both realistic band structure and a simpler analytical approximation to investigate impact ionization in bulk AlxGa1-xAs and also submicron p(+)in(+) diodes for x less than or equal to 40%. The calculated impact ionization rates in bulk AlxGa1-xAs compared well with previous experiments and the electron- and hole-initiated current multiplication characteristics of the p(+)in(+) diodes were found to agree very well with our experimental results for both the analytical and the numerical models.",

keywords = "LUCKY-DRIFT THEORY, AVALANCHE PHOTODIODES, SILICON, GAAS, MODEL, HOLE, SEMICONDUCTORS, BREAKDOWN, ELECTRON, ALXGA1-XAS",

author = "Dunn, {G M} and R Ghin and Rees, {G J} and David, {J P R} and S Plimmer and Herbert, {D C}",

year = "1999",

language = "English",

volume = "14",

pages = "994--1000",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

}

TY - JOUR

T1 - Monte Carlo simulation of high-field transport and impact ionization in AlGaAs p(+)in(+) diodes

AU - Dunn, G M

AU - Ghin, R

AU - Rees, G J

AU - David, J P R

AU - Plimmer, S

AU - Herbert, D C

PY - 1999

Y1 - 1999

N2 - We have used Monte Carlo simulation methods employing both realistic band structure and a simpler analytical approximation to investigate impact ionization in bulk AlxGa1-xAs and also submicron p(+)in(+) diodes for x less than or equal to 40%. The calculated impact ionization rates in bulk AlxGa1-xAs compared well with previous experiments and the electron- and hole-initiated current multiplication characteristics of the p(+)in(+) diodes were found to agree very well with our experimental results for both the analytical and the numerical models.

AB - We have used Monte Carlo simulation methods employing both realistic band structure and a simpler analytical approximation to investigate impact ionization in bulk AlxGa1-xAs and also submicron p(+)in(+) diodes for x less than or equal to 40%. The calculated impact ionization rates in bulk AlxGa1-xAs compared well with previous experiments and the electron- and hole-initiated current multiplication characteristics of the p(+)in(+) diodes were found to agree very well with our experimental results for both the analytical and the numerical models.

KW - LUCKY-DRIFT THEORY

KW - AVALANCHE PHOTODIODES

KW - SILICON

KW - GAAS

KW - MODEL

KW - HOLE

KW - SEMICONDUCTORS

KW - BREAKDOWN

KW - ELECTRON

KW - ALXGA1-XAS

M3 - Article

SN - 0268-1242

VL - 14

SP - 994

EP - 1000

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

ER -

Monte Carlo simulation of high-field transport and impact ionization in AlGaAs p(+)in(+) diodes

Abstract

Keywords

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