Monte Carlo simulation of high-field transport and impact ionization in AlGaAs p(+)in(+) diodes

G M Dunn, R Ghin, G J Rees, J P R David, S Plimmer, D C Herbert

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We have used Monte Carlo simulation methods employing both realistic band structure and a simpler analytical approximation to investigate impact ionization in bulk AlxGa1-xAs and also submicron p(+)in(+) diodes for x less than or equal to 40%. The calculated impact ionization rates in bulk AlxGa1-xAs compared well with previous experiments and the electron- and hole-initiated current multiplication characteristics of the p(+)in(+) diodes were found to agree very well with our experimental results for both the analytical and the numerical models.

Original languageEnglish
Pages (from-to)994-1000
Number of pages7
JournalSemiconductor Science and Technology
Volume14
Publication statusPublished - 1999

Keywords

  • LUCKY-DRIFT THEORY
  • AVALANCHE PHOTODIODES
  • SILICON
  • GAAS
  • MODEL
  • HOLE
  • SEMICONDUCTORS
  • BREAKDOWN
  • ELECTRON
  • ALXGA1-XAS

Cite this

Dunn, G. M., Ghin, R., Rees, G. J., David, J. P. R., Plimmer, S., & Herbert, D. C. (1999). Monte Carlo simulation of high-field transport and impact ionization in AlGaAs p(+)in(+) diodes. Semiconductor Science and Technology, 14, 994-1000.

Monte Carlo simulation of high-field transport and impact ionization in AlGaAs p(+)in(+) diodes. / Dunn, G M ; Ghin, R ; Rees, G J ; David, J P R ; Plimmer, S ; Herbert, D C .

In: Semiconductor Science and Technology, Vol. 14, 1999, p. 994-1000.

Research output: Contribution to journalArticle

Dunn, G M ; Ghin, R ; Rees, G J ; David, J P R ; Plimmer, S ; Herbert, D C . / Monte Carlo simulation of high-field transport and impact ionization in AlGaAs p(+)in(+) diodes. In: Semiconductor Science and Technology. 1999 ; Vol. 14. pp. 994-1000.
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AU - Dunn, G M

AU - Ghin, R

AU - Rees, G J

AU - David, J P R

AU - Plimmer, S

AU - Herbert, D C

PY - 1999

Y1 - 1999

N2 - We have used Monte Carlo simulation methods employing both realistic band structure and a simpler analytical approximation to investigate impact ionization in bulk AlxGa1-xAs and also submicron p(+)in(+) diodes for x less than or equal to 40%. The calculated impact ionization rates in bulk AlxGa1-xAs compared well with previous experiments and the electron- and hole-initiated current multiplication characteristics of the p(+)in(+) diodes were found to agree very well with our experimental results for both the analytical and the numerical models.

AB - We have used Monte Carlo simulation methods employing both realistic band structure and a simpler analytical approximation to investigate impact ionization in bulk AlxGa1-xAs and also submicron p(+)in(+) diodes for x less than or equal to 40%. The calculated impact ionization rates in bulk AlxGa1-xAs compared well with previous experiments and the electron- and hole-initiated current multiplication characteristics of the p(+)in(+) diodes were found to agree very well with our experimental results for both the analytical and the numerical models.

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KW - AVALANCHE PHOTODIODES

KW - SILICON

KW - GAAS

KW - MODEL

KW - HOLE

KW - SEMICONDUCTORS

KW - BREAKDOWN

KW - ELECTRON

KW - ALXGA1-XAS

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JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

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