Monte Carlo simulations of asymmetry multiple transit region Gunn diodes

Geoffrey Martin Dunn, Y. P. Teoh, N. Priestley, M. Carr

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A novel GaAs Gunn diode design utilizing multiple transit regions with different transit region lengths has been simulated using the Monte Carlo method. Conventional Gunn diodes or multiple transit region diodes with identical length transit regions oscillate with one peak optimum frequency. We discovered that these devices with 'nearly equal' transit region lengths have a broader frequency response and devices with several transit regions of substantially different lengths exhibit multiple resonance behaviour.

Original languageEnglish
Pages (from-to)418-422
Number of pages4
JournalSemiconductor Science and Technology
Volume20
Issue number5
DOIs
Publication statusPublished - May 2005

Cite this

Monte Carlo simulations of asymmetry multiple transit region Gunn diodes. / Dunn, Geoffrey Martin; Teoh, Y. P.; Priestley, N.; Carr, M.

In: Semiconductor Science and Technology, Vol. 20, No. 5, 05.2005, p. 418-422.

Research output: Contribution to journalArticle

Dunn, Geoffrey Martin ; Teoh, Y. P. ; Priestley, N. ; Carr, M. / Monte Carlo simulations of asymmetry multiple transit region Gunn diodes. In: Semiconductor Science and Technology. 2005 ; Vol. 20, No. 5. pp. 418-422.
@article{0077b3ff372646abb37b6a021330de63,
title = "Monte Carlo simulations of asymmetry multiple transit region Gunn diodes",
abstract = "A novel GaAs Gunn diode design utilizing multiple transit regions with different transit region lengths has been simulated using the Monte Carlo method. Conventional Gunn diodes or multiple transit region diodes with identical length transit regions oscillate with one peak optimum frequency. We discovered that these devices with 'nearly equal' transit region lengths have a broader frequency response and devices with several transit regions of substantially different lengths exhibit multiple resonance behaviour.",
author = "Dunn, {Geoffrey Martin} and Teoh, {Y. P.} and N. Priestley and M. Carr",
year = "2005",
month = "5",
doi = "10.1088/0268-1242/20/5/016",
language = "English",
volume = "20",
pages = "418--422",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "5",

}

TY - JOUR

T1 - Monte Carlo simulations of asymmetry multiple transit region Gunn diodes

AU - Dunn, Geoffrey Martin

AU - Teoh, Y. P.

AU - Priestley, N.

AU - Carr, M.

PY - 2005/5

Y1 - 2005/5

N2 - A novel GaAs Gunn diode design utilizing multiple transit regions with different transit region lengths has been simulated using the Monte Carlo method. Conventional Gunn diodes or multiple transit region diodes with identical length transit regions oscillate with one peak optimum frequency. We discovered that these devices with 'nearly equal' transit region lengths have a broader frequency response and devices with several transit regions of substantially different lengths exhibit multiple resonance behaviour.

AB - A novel GaAs Gunn diode design utilizing multiple transit regions with different transit region lengths has been simulated using the Monte Carlo method. Conventional Gunn diodes or multiple transit region diodes with identical length transit regions oscillate with one peak optimum frequency. We discovered that these devices with 'nearly equal' transit region lengths have a broader frequency response and devices with several transit regions of substantially different lengths exhibit multiple resonance behaviour.

U2 - 10.1088/0268-1242/20/5/016

DO - 10.1088/0268-1242/20/5/016

M3 - Article

VL - 20

SP - 418

EP - 422

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 5

ER -