Monte Carlo simulations of asymmetry multiple transit region Gunn diodes

Geoffrey Martin Dunn, Y. P. Teoh, N. Priestley, M. Carr

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A novel GaAs Gunn diode design utilizing multiple transit regions with different transit region lengths has been simulated using the Monte Carlo method. Conventional Gunn diodes or multiple transit region diodes with identical length transit regions oscillate with one peak optimum frequency. We discovered that these devices with 'nearly equal' transit region lengths have a broader frequency response and devices with several transit regions of substantially different lengths exhibit multiple resonance behaviour.

Original languageEnglish
Pages (from-to)418-422
Number of pages4
JournalSemiconductor Science and Technology
Volume20
Issue number5
DOIs
Publication statusPublished - May 2005

Cite this