Monte Carlo simulations of asymmetry multiple transit region Gunn diodes

Geoffrey Martin Dunn; Y. P. Teoh; N. Priestley; M. Carr

doi:10.1088/0268-1242/20/5/016

Monte Carlo simulations of asymmetry multiple transit region Gunn diodes

Geoffrey Martin Dunn, Y. P. Teoh, N. Priestley, M. Carr

Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

A novel GaAs Gunn diode design utilizing multiple transit regions with different transit region lengths has been simulated using the Monte Carlo method. Conventional Gunn diodes or multiple transit region diodes with identical length transit regions oscillate with one peak optimum frequency. We discovered that these devices with 'nearly equal' transit region lengths have a broader frequency response and devices with several transit regions of substantially different lengths exhibit multiple resonance behaviour.

Original language	English
Pages (from-to)	418-422
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	20
Issue number	5
DOIs	https://doi.org/10.1088/0268-1242/20/5/016
Publication status	Published - May 2005

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10.1088/0268-1242/20/5/016

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title = "Monte Carlo simulations of asymmetry multiple transit region Gunn diodes",

abstract = "A novel GaAs Gunn diode design utilizing multiple transit regions with different transit region lengths has been simulated using the Monte Carlo method. Conventional Gunn diodes or multiple transit region diodes with identical length transit regions oscillate with one peak optimum frequency. We discovered that these devices with 'nearly equal' transit region lengths have a broader frequency response and devices with several transit regions of substantially different lengths exhibit multiple resonance behaviour.",

author = "Dunn, {Geoffrey Martin} and Teoh, {Y. P.} and N. Priestley and M. Carr",

year = "2005",

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language = "English",

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T1 - Monte Carlo simulations of asymmetry multiple transit region Gunn diodes

AU - Dunn, Geoffrey Martin

AU - Teoh, Y. P.

AU - Priestley, N.

AU - Carr, M.

PY - 2005/5

Y1 - 2005/5

N2 - A novel GaAs Gunn diode design utilizing multiple transit regions with different transit region lengths has been simulated using the Monte Carlo method. Conventional Gunn diodes or multiple transit region diodes with identical length transit regions oscillate with one peak optimum frequency. We discovered that these devices with 'nearly equal' transit region lengths have a broader frequency response and devices with several transit regions of substantially different lengths exhibit multiple resonance behaviour.

AB - A novel GaAs Gunn diode design utilizing multiple transit regions with different transit region lengths has been simulated using the Monte Carlo method. Conventional Gunn diodes or multiple transit region diodes with identical length transit regions oscillate with one peak optimum frequency. We discovered that these devices with 'nearly equal' transit region lengths have a broader frequency response and devices with several transit regions of substantially different lengths exhibit multiple resonance behaviour.

U2 - 10.1088/0268-1242/20/5/016

DO - 10.1088/0268-1242/20/5/016

M3 - Article

SN - 0268-1242

VL - 20

SP - 418

EP - 422

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 5

ER -

Monte Carlo simulations of asymmetry multiple transit region Gunn diodes

Abstract

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