Multiple and broad frequency response Gunn diodes

N J Pilgrim, R F Macpherson, A Khalid, G M Dunn, D R S Cumming

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Gunn diodes, operating in transit time mode, are usually thought of as incapable of generating power at multiple frequencies or over a broad frequency range. In this paper, we report experimental results showing that these diodes can generate power at several frequencies and, using Monte Carlo simulations of both planar and vertical devices, we offer an explanation of how this unusual behaviour may come into being and suggest possible applications for this novel device.
Original languageEnglish
Article number105010
Number of pages7
JournalSemiconductor Science and Technology
Volume24
Issue number10
Early online date15 Sep 2009
DOIs
Publication statusPublished - Oct 2009

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Gunn diodes
frequency response
Frequency response
Diodes
transit time
frequency ranges
diodes
simulation
Monte Carlo simulation

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Pilgrim, N. J., Macpherson, R. F., Khalid, A., Dunn, G. M., & Cumming, D. R. S. (2009). Multiple and broad frequency response Gunn diodes. Semiconductor Science and Technology, 24(10), [105010]. https://doi.org/10.1088/0268-1242/24/10/105010

Multiple and broad frequency response Gunn diodes. / Pilgrim, N J; Macpherson, R F; Khalid, A; Dunn, G M; Cumming, D R S.

In: Semiconductor Science and Technology, Vol. 24, No. 10, 105010, 10.2009.

Research output: Contribution to journalArticle

Pilgrim, N J ; Macpherson, R F ; Khalid, A ; Dunn, G M ; Cumming, D R S. / Multiple and broad frequency response Gunn diodes. In: Semiconductor Science and Technology. 2009 ; Vol. 24, No. 10.
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