Multiple Transit Region Gunn Diodes

Research output: Contribution to journalArticle

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Abstract

Conventional Gunn diodes consist of a single transit region. For high frequency generation, these devices are quite short and hence yield limited power because of the small potential that can be applied before the device breaks down. In this paper, we present Monte Carlo simulations of multiple (up to eight) transit regions Gunn Diodes and investigate their feasibility and power performance. We found that coherent transfer of domains occurs in all the devices we investigated and there seems to be no obvious upper limit to the number of transit regions that could be incorporated into a single device (in the absence of thermal limitations). Our models predict that the power attainable from the Gunn diodes increases linearly with the square of the number of transit regions.

Original languageEnglish
JournalElectronics Letters
Volume38
DOIs
Publication statusPublished - 2002

Cite this

Multiple Transit Region Gunn Diodes. / Dunn, Geoffrey Martin; Teoh, Y. P.

In: Electronics Letters, Vol. 38, 2002.

Research output: Contribution to journalArticle

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AB - Conventional Gunn diodes consist of a single transit region. For high frequency generation, these devices are quite short and hence yield limited power because of the small potential that can be applied before the device breaks down. In this paper, we present Monte Carlo simulations of multiple (up to eight) transit regions Gunn Diodes and investigate their feasibility and power performance. We found that coherent transfer of domains occurs in all the devices we investigated and there seems to be no obvious upper limit to the number of transit regions that could be incorporated into a single device (in the absence of thermal limitations). Our models predict that the power attainable from the Gunn diodes increases linearly with the square of the number of transit regions.

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