Novel planar Gunn diode operating in fundamental mode up to 158 GHz

Chong Li; A Khalid; N Pilgrim; M C Holland; G Dunn; D R S Cumming

doi:10.1088/1742-6596/193/1/012029

Novel planar Gunn diode operating in fundamental mode up to 158 GHz

Chong Li, A Khalid, N Pilgrim, M C Holland, G Dunn, D R S Cumming

Physics

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

We show the experimental realisation of fundamental mode operation of planar Gunn diode structures fabricated in GaAs/AlGaAs quantum wells. The electron density in the active channel is enhanced by positioning double delta-doping layers on either side. Small signal measurement shows that a typical device exhibits negative resistance up to 158 GHz. Using this device structure we have demonstrated a planar Gunn oscillator working at 115.5 GHz with an output power of -28 dBm.

Original language	English
Article number	012029
Journal	Journal of Physics: Conference Series
Volume	193
Issue number	1
Early online date	16 Nov 2009
DOIs	https://doi.org/10.1088/1742-6596/193/1/012029
Publication status	Published - 2009

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title = "Novel planar Gunn diode operating in fundamental mode up to 158 GHz",

abstract = "We show the experimental realisation of fundamental mode operation of planar Gunn diode structures fabricated in GaAs/AlGaAs quantum wells. The electron density in the active channel is enhanced by positioning double delta-doping layers on either side. Small signal measurement shows that a typical device exhibits negative resistance up to 158 GHz. Using this device structure we have demonstrated a planar Gunn oscillator working at 115.5 GHz with an output power of -28 dBm.",

author = "Chong Li and A Khalid and N Pilgrim and Holland, {M C} and G Dunn and Cumming, {D R S}",

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AU - Li, Chong

AU - Khalid, A

AU - Pilgrim, N

AU - Holland, M C

AU - Dunn, G

AU - Cumming, D R S

PY - 2009

Y1 - 2009

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AB - We show the experimental realisation of fundamental mode operation of planar Gunn diode structures fabricated in GaAs/AlGaAs quantum wells. The electron density in the active channel is enhanced by positioning double delta-doping layers on either side. Small signal measurement shows that a typical device exhibits negative resistance up to 158 GHz. Using this device structure we have demonstrated a planar Gunn oscillator working at 115.5 GHz with an output power of -28 dBm.

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DO - 10.1088/1742-6596/193/1/012029

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VL - 193

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

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ER -

Novel planar Gunn diode operating in fundamental mode up to 158 GHz

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