Novel planar Gunn diode operating in fundamental mode up to 158 GHz

Chong Li, A Khalid, N Pilgrim, M C Holland, G Dunn, D R S Cumming

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

We show the experimental realisation of fundamental mode operation of planar Gunn diode structures fabricated in GaAs/AlGaAs quantum wells. The electron density in the active channel is enhanced by positioning double delta-doping layers on either side. Small signal measurement shows that a typical device exhibits negative resistance up to 158 GHz. Using this device structure we have demonstrated a planar Gunn oscillator working at 115.5 GHz with an output power of -28 dBm.
Original languageEnglish
Article number012029
JournalJournal of Physics: Conference Series
Volume193
Issue number1
Early online date16 Nov 2009
DOIs
Publication statusPublished - 2009

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negative resistance devices
Gunn diodes
signal measurement
positioning
aluminum gallium arsenides
oscillators
quantum wells
output

Cite this

Novel planar Gunn diode operating in fundamental mode up to 158 GHz. / Li, Chong; Khalid, A; Pilgrim, N; Holland, M C; Dunn, G; Cumming, D R S.

In: Journal of Physics: Conference Series, Vol. 193, No. 1, 012029, 2009.

Research output: Contribution to journalArticle

Li, Chong ; Khalid, A ; Pilgrim, N ; Holland, M C ; Dunn, G ; Cumming, D R S. / Novel planar Gunn diode operating in fundamental mode up to 158 GHz. In: Journal of Physics: Conference Series. 2009 ; Vol. 193, No. 1.
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