Novel planar Gunn diode operating in fundamental mode up to 158 GHz

Chong Li, A Khalid, N Pilgrim, M C Holland, G Dunn, D R S Cumming

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

We show the experimental realisation of fundamental mode operation of planar Gunn diode structures fabricated in GaAs/AlGaAs quantum wells. The electron density in the active channel is enhanced by positioning double delta-doping layers on either side. Small signal measurement shows that a typical device exhibits negative resistance up to 158 GHz. Using this device structure we have demonstrated a planar Gunn oscillator working at 115.5 GHz with an output power of -28 dBm.
Original languageEnglish
Article number012029
JournalJournal of Physics: Conference Series
Volume193
Issue number1
Early online date16 Nov 2009
DOIs
Publication statusPublished - 2009

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