Planar Gunn-effect devices

N J Pilgrim, A Khalid, G M Dunn, D R S Cumming

Research output: Contribution to conferencePoster

Abstract

Traditional Gunn diode structures are constructed vertically, limiting the ease with which they may be integrated into cavities and composite systems. Recently there has been a resurgence of interest in planar Gunn structures, which do not share this problem and have other potential advantages such as with respect to frequency and power output. Our work targets structures with designs moderately similar to those of HEMT devices and composed primarily of inexpensive GaAs and AlGaAs materials. Monte Carlo transport modelling has been instrumental in predicting the operation of these devices and consequently their design. Physically realised devices have been measured to produce fundamental-mode signals at well over 0.1 THz, with power level in the µW range at the present time. Recent developments in these devices are presented, including the increased scope that their planar design provides for modulating current output through novel contact design.
Original languageEnglish
Publication statusPublished - Jul 2009
EventUK Semiconductors 2009 - Sheffield, United Kingdom
Duration: 1 Jul 20092 Jul 2009

Conference

ConferenceUK Semiconductors 2009
CountryUnited Kingdom
CitySheffield
Period1/07/092/07/09

Fingerprint

Gunn effect
Gunn diodes
output
high electron mobility transistors
aluminum gallium arsenides
cavities
composite materials

Cite this

Pilgrim, N. J., Khalid, A., Dunn, G. M., & Cumming, D. R. S. (2009). Planar Gunn-effect devices. Poster session presented at UK Semiconductors 2009, Sheffield, United Kingdom.

Planar Gunn-effect devices. / Pilgrim, N J; Khalid, A; Dunn, G M; Cumming, D R S.

2009. Poster session presented at UK Semiconductors 2009, Sheffield, United Kingdom.

Research output: Contribution to conferencePoster

Pilgrim, NJ, Khalid, A, Dunn, GM & Cumming, DRS 2009, 'Planar Gunn-effect devices' UK Semiconductors 2009, Sheffield, United Kingdom, 1/07/09 - 2/07/09, .
Pilgrim NJ, Khalid A, Dunn GM, Cumming DRS. Planar Gunn-effect devices. 2009. Poster session presented at UK Semiconductors 2009, Sheffield, United Kingdom.
Pilgrim, N J ; Khalid, A ; Dunn, G M ; Cumming, D R S. / Planar Gunn-effect devices. Poster session presented at UK Semiconductors 2009, Sheffield, United Kingdom.
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AU - Khalid, A

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AU - Cumming, D R S

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N2 - Traditional Gunn diode structures are constructed vertically, limiting the ease with which they may be integrated into cavities and composite systems. Recently there has been a resurgence of interest in planar Gunn structures, which do not share this problem and have other potential advantages such as with respect to frequency and power output. Our work targets structures with designs moderately similar to those of HEMT devices and composed primarily of inexpensive GaAs and AlGaAs materials. Monte Carlo transport modelling has been instrumental in predicting the operation of these devices and consequently their design. Physically realised devices have been measured to produce fundamental-mode signals at well over 0.1 THz, with power level in the µW range at the present time. Recent developments in these devices are presented, including the increased scope that their planar design provides for modulating current output through novel contact design.

AB - Traditional Gunn diode structures are constructed vertically, limiting the ease with which they may be integrated into cavities and composite systems. Recently there has been a resurgence of interest in planar Gunn structures, which do not share this problem and have other potential advantages such as with respect to frequency and power output. Our work targets structures with designs moderately similar to those of HEMT devices and composed primarily of inexpensive GaAs and AlGaAs materials. Monte Carlo transport modelling has been instrumental in predicting the operation of these devices and consequently their design. Physically realised devices have been measured to produce fundamental-mode signals at well over 0.1 THz, with power level in the µW range at the present time. Recent developments in these devices are presented, including the increased scope that their planar design provides for modulating current output through novel contact design.

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