Planar Gunn-type triode oscillator at 83 GHz

A. Khalid; G. M. Dunn; Neil John Pilgrim; C. R. Stanley; I. G. Thayne; M. Holland; D. R. S. Cumming

doi:10.1049/el:20071099

Planar Gunn-type triode oscillator at 83 GHz

A. Khalid, G. M. Dunn, Neil John Pilgrim, C. R. Stanley, I. G. Thayne, M. Holland, D. R. S. Cumming

Physics

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Abstract

A millimetre-wave Gunn triode device using an AlGaAs/GaAs quantum well structure is realised. The material used was grown by molecular beam epitaxy and devices were made using electron beam lithography Oscillation occurs at 83 GHz for a 0.5 mu m gate length device with a 1.3 mu m gate-cathode separation. Experimental results are in excellent agreement with Monte Carlo calculations. Planar Gunn triodes have potential for high frequency chip integration for millimetre-wave and terahertz applications.

Original language	English
Pages (from-to)	837-838
Number of pages	2
Journal	Electronics Letters
Volume	43
Issue number	15
DOIs	https://doi.org/10.1049/el:20071099
Publication status	Published - 19 Jul 2007

Keywords

performance
diodes

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10.1049/el:20071099

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title = "Planar Gunn-type triode oscillator at 83 GHz",

abstract = "A millimetre-wave Gunn triode device using an AlGaAs/GaAs quantum well structure is realised. The material used was grown by molecular beam epitaxy and devices were made using electron beam lithography Oscillation occurs at 83 GHz for a 0.5 mu m gate length device with a 1.3 mu m gate-cathode separation. Experimental results are in excellent agreement with Monte Carlo calculations. Planar Gunn triodes have potential for high frequency chip integration for millimetre-wave and terahertz applications.",

keywords = "performance, diodes",

author = "A. Khalid and Dunn, {G. M.} and Pilgrim, {Neil John} and Stanley, {C. R.} and Thayne, {I. G.} and M. Holland and Cumming, {D. R. S.}",

year = "2007",

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T1 - Planar Gunn-type triode oscillator at 83 GHz

AU - Khalid, A.

AU - Dunn, G. M.

AU - Pilgrim, Neil John

AU - Stanley, C. R.

AU - Thayne, I. G.

AU - Holland, M.

AU - Cumming, D. R. S.

PY - 2007/7/19

Y1 - 2007/7/19

N2 - A millimetre-wave Gunn triode device using an AlGaAs/GaAs quantum well structure is realised. The material used was grown by molecular beam epitaxy and devices were made using electron beam lithography Oscillation occurs at 83 GHz for a 0.5 mu m gate length device with a 1.3 mu m gate-cathode separation. Experimental results are in excellent agreement with Monte Carlo calculations. Planar Gunn triodes have potential for high frequency chip integration for millimetre-wave and terahertz applications.

AB - A millimetre-wave Gunn triode device using an AlGaAs/GaAs quantum well structure is realised. The material used was grown by molecular beam epitaxy and devices were made using electron beam lithography Oscillation occurs at 83 GHz for a 0.5 mu m gate length device with a 1.3 mu m gate-cathode separation. Experimental results are in excellent agreement with Monte Carlo calculations. Planar Gunn triodes have potential for high frequency chip integration for millimetre-wave and terahertz applications.

KW - performance

KW - diodes

U2 - 10.1049/el:20071099

DO - 10.1049/el:20071099

M3 - Article

SN - 0013-5194

VL - 43

SP - 837

EP - 838

JO - Electronics Letters

JF - Electronics Letters

IS - 15

ER -

Planar Gunn-type triode oscillator at 83 GHz

Abstract

Keywords

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