Planar Gunn-type triode oscillator at 83 GHz

A. Khalid, G. M. Dunn, Neil John Pilgrim, C. R. Stanley, I. G. Thayne, M. Holland, D. R. S. Cumming

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Abstract

A millimetre-wave Gunn triode device using an AlGaAs/GaAs quantum well structure is realised. The material used was grown by molecular beam epitaxy and devices were made using electron beam lithography Oscillation occurs at 83 GHz for a 0.5 mu m gate length device with a 1.3 mu m gate-cathode separation. Experimental results are in excellent agreement with Monte Carlo calculations. Planar Gunn triodes have potential for high frequency chip integration for millimetre-wave and terahertz applications.

Original languageEnglish
Pages (from-to)837-838
Number of pages2
JournalElectronics Letters
Volume43
Issue number15
DOIs
Publication statusPublished - 19 Jul 2007

Keywords

  • performance
  • diodes

Cite this

Khalid, A., Dunn, G. M., Pilgrim, N. J., Stanley, C. R., Thayne, I. G., Holland, M., & Cumming, D. R. S. (2007). Planar Gunn-type triode oscillator at 83 GHz. Electronics Letters, 43(15), 837-838. https://doi.org/10.1049/el:20071099