### Abstract

The length of the transit region of a Gunn diode determines the natural frequency at which it operates in fundamental mode-the shorter the device, the higher the frequency of operation. The long-held view on Gunn diode design is that for a functioning device the minimum length of the transit region is about 1.5 mu m, limiting the devices to fundamental mode operation at frequencies of roughly 60 GHz. Study of these devices by more advanced Monte Carlo techniques that simulate the ballistic transport and electron-phonon interactions that govern device behaviour, offers a new lower bound of 0.5 mu m, which is already being approached by the experimental evidence that has shown planar and vertical devices exhibiting Gunn operation at 600 nm and 700 nm, respectively. The paper presents results of the first ever THz submicron planar Gunn diode fabricated in In0.53Ga0.47As on an InP substrate, operating at a fundamental frequency above 300 GHz. Experimentally measured rf power of 28 mu W was obtained from a 600 nm long x 120 mu m wide device. At this new length, operation in fundamental mode at much higher frequencies becomes possible-the Monte Carlo model used predicts power output at frequencies over 300 GHz. (C) 2014 AIP Publishing LLC.

Original language | English |
---|---|

Article number | 114502 |

Number of pages | 6 |

Journal | Journal of Applied Physics |

Volume | 115 |

Issue number | 11 |

DOIs | |

Publication status | Published - 21 Mar 2014 |

### Keywords

- Monte-Carlo-simulation
- technologically significant semiconductors
- zinblende structures
- frequency
- transport
- diamond

### Cite this

*Journal of Applied Physics*,

*115*(11), [114502]. https://doi.org/10.1063/1.4868705

**Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode.** / Khalid, Ata; Dunn, G. M.; Macpherson, R. F.; Thoms, S.; Macintyre, D.; Li, C.; Steer, M. J.; Papageorgiou, V.; Thayne, I. G.; Kuball, M.; Oxley, C. H.; Montes Bajo, M.; Stephen, A.; Glover, J.; Cumming, D. R. S.

Research output: Contribution to journal › Article

*Journal of Applied Physics*, vol. 115, no. 11, 114502. https://doi.org/10.1063/1.4868705

}

TY - JOUR

T1 - Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode

AU - Khalid, Ata

AU - Dunn, G. M.

AU - Macpherson, R. F.

AU - Thoms, S.

AU - Macintyre, D.

AU - Li, C.

AU - Steer, M. J.

AU - Papageorgiou, V.

AU - Thayne, I. G.

AU - Kuball, M.

AU - Oxley, C. H.

AU - Montes Bajo, M.

AU - Stephen, A.

AU - Glover, J.

AU - Cumming, D. R. S.

PY - 2014/3/21

Y1 - 2014/3/21

N2 - The length of the transit region of a Gunn diode determines the natural frequency at which it operates in fundamental mode-the shorter the device, the higher the frequency of operation. The long-held view on Gunn diode design is that for a functioning device the minimum length of the transit region is about 1.5 mu m, limiting the devices to fundamental mode operation at frequencies of roughly 60 GHz. Study of these devices by more advanced Monte Carlo techniques that simulate the ballistic transport and electron-phonon interactions that govern device behaviour, offers a new lower bound of 0.5 mu m, which is already being approached by the experimental evidence that has shown planar and vertical devices exhibiting Gunn operation at 600 nm and 700 nm, respectively. The paper presents results of the first ever THz submicron planar Gunn diode fabricated in In0.53Ga0.47As on an InP substrate, operating at a fundamental frequency above 300 GHz. Experimentally measured rf power of 28 mu W was obtained from a 600 nm long x 120 mu m wide device. At this new length, operation in fundamental mode at much higher frequencies becomes possible-the Monte Carlo model used predicts power output at frequencies over 300 GHz. (C) 2014 AIP Publishing LLC.

AB - The length of the transit region of a Gunn diode determines the natural frequency at which it operates in fundamental mode-the shorter the device, the higher the frequency of operation. The long-held view on Gunn diode design is that for a functioning device the minimum length of the transit region is about 1.5 mu m, limiting the devices to fundamental mode operation at frequencies of roughly 60 GHz. Study of these devices by more advanced Monte Carlo techniques that simulate the ballistic transport and electron-phonon interactions that govern device behaviour, offers a new lower bound of 0.5 mu m, which is already being approached by the experimental evidence that has shown planar and vertical devices exhibiting Gunn operation at 600 nm and 700 nm, respectively. The paper presents results of the first ever THz submicron planar Gunn diode fabricated in In0.53Ga0.47As on an InP substrate, operating at a fundamental frequency above 300 GHz. Experimentally measured rf power of 28 mu W was obtained from a 600 nm long x 120 mu m wide device. At this new length, operation in fundamental mode at much higher frequencies becomes possible-the Monte Carlo model used predicts power output at frequencies over 300 GHz. (C) 2014 AIP Publishing LLC.

KW - Monte-Carlo-simulation

KW - technologically significant semiconductors

KW - zinblende structures

KW - frequency

KW - transport

KW - diamond

U2 - 10.1063/1.4868705

DO - 10.1063/1.4868705

M3 - Article

VL - 115

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

M1 - 114502

ER -