Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode

Ata Khalid*, G. M. Dunn, R. F. Macpherson, S. Thoms, D. Macintyre, C. Li, M. J. Steer, V. Papageorgiou, I. G. Thayne, M. Kuball, C. H. Oxley, M. Montes Bajo, A. Stephen, J. Glover, D. R. S. Cumming

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

55 Citations (Scopus)


The length of the transit region of a Gunn diode determines the natural frequency at which it operates in fundamental mode-the shorter the device, the higher the frequency of operation. The long-held view on Gunn diode design is that for a functioning device the minimum length of the transit region is about 1.5 mu m, limiting the devices to fundamental mode operation at frequencies of roughly 60 GHz. Study of these devices by more advanced Monte Carlo techniques that simulate the ballistic transport and electron-phonon interactions that govern device behaviour, offers a new lower bound of 0.5 mu m, which is already being approached by the experimental evidence that has shown planar and vertical devices exhibiting Gunn operation at 600 nm and 700 nm, respectively. The paper presents results of the first ever THz submicron planar Gunn diode fabricated in In0.53Ga0.47As on an InP substrate, operating at a fundamental frequency above 300 GHz. Experimentally measured rf power of 28 mu W was obtained from a 600 nm long x 120 mu m wide device. At this new length, operation in fundamental mode at much higher frequencies becomes possible-the Monte Carlo model used predicts power output at frequencies over 300 GHz. 

Original languageEnglish
Article number114502
Number of pages7
JournalJournal of Applied Physics
Issue number11
Early online date18 Mar 2014
Publication statusPublished - 21 Mar 2014


  • Monte-Carlo-simulation
  • technologically significant semiconductors
  • zinblende structures
  • frequency
  • transport
  • diamond


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