### Abstract

Original language | English |
---|---|

Pages (from-to) | 263-266 |

Number of pages | 4 |

Journal | Journal of Computational Electronics |

Volume | 1 |

Issue number | 1-2 |

DOIs | |

Publication status | Published - Jul 2002 |

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### Cite this

*Journal of Computational Electronics*,

*1*(1-2), 263-266. https://doi.org/10.1023/A:1020798113148

**Thermally Self-Consistent Monte Carlo Device Simulations.** / Pilgrim, N.J.; Batty, W.; Kelsall, R.W.

Research output: Contribution to journal › Article

*Journal of Computational Electronics*, vol. 1, no. 1-2, pp. 263-266. https://doi.org/10.1023/A:1020798113148

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TY - JOUR

T1 - Thermally Self-Consistent Monte Carlo Device Simulations

AU - Pilgrim, N.J.

AU - Batty, W.

AU - Kelsall, R.W.

PY - 2002/7

Y1 - 2002/7

N2 - We present details of a Monte Carlo simulation code which is coupled to a Heat Diffusion Equation (HDE) solver. Through an iterative procedure, which bypasses the differences in electronic and thermal timescales, this coupled code is capable of producing steady-state thermally self-consistent device characteristics. Electronically-generated thermal flux is calculated by monitoring the net rate of phonon emission, which may be resolved both spatially and by phonon type. The thermal solution is extracted through use of a novel analytical thermal resistance matrix technique which avoids calculation of temperatures beyond the electronically important device region while including the large-scale boundary conditions. On application to a GaAs MESFET the expected 'thermal droop' behaviour is obtained in the I-V characteristics and we find a linear relationship between peak lattice temperature and applied source-drain bias. At moderate biases the contribution of intervalley phonons to the thermal power output surpasses that of optical phonons.

AB - We present details of a Monte Carlo simulation code which is coupled to a Heat Diffusion Equation (HDE) solver. Through an iterative procedure, which bypasses the differences in electronic and thermal timescales, this coupled code is capable of producing steady-state thermally self-consistent device characteristics. Electronically-generated thermal flux is calculated by monitoring the net rate of phonon emission, which may be resolved both spatially and by phonon type. The thermal solution is extracted through use of a novel analytical thermal resistance matrix technique which avoids calculation of temperatures beyond the electronically important device region while including the large-scale boundary conditions. On application to a GaAs MESFET the expected 'thermal droop' behaviour is obtained in the I-V characteristics and we find a linear relationship between peak lattice temperature and applied source-drain bias. At moderate biases the contribution of intervalley phonons to the thermal power output surpasses that of optical phonons.

U2 - 10.1023/A:1020798113148

DO - 10.1023/A:1020798113148

M3 - Article

VL - 1

SP - 263

EP - 266

JO - Journal of Computational Electronics

JF - Journal of Computational Electronics

SN - 1569-8025

IS - 1-2

ER -