A 218-GHz second-harmonic multiquantum well GaAs-based planar Gunn diodes

A. Khalid*, C. Li, V. Papageorgiou, N. J. Pilgrim, G. M. Dunn, D. R. S. Cumming

*Corresponding author for this work

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We present a multiquantum-well channel GaAs-based planar Gunn diode. By introducing extra channels, the output RF power has been significantly improved compared to single-channel GaAs-based planar Gunn diodes. For a 1.14 mu m length and 60 mu m wide device, the highest power achieved was approximately -4 dBm operating in fundamental mode at 109 GHz, and -26.6 dBm at its second harmonic at 218 GHz. The DC-to-RF conversion efficiency was similar to 0.3% for the fundamental mode of oscillation. (C) 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:686688, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27393

Original languageEnglish
Pages (from-to)686-688
Number of pages3
JournalMicrowave and Optical Technology Letters
Volume55
Issue number3
Early online date28 Jan 2013
DOIs
Publication statusPublished - Mar 2013

Keywords

  • semiconductor heterojunctions
  • millimeter wave source
  • Gunn devices
  • gallium compounds

Cite this

A 218-GHz second-harmonic multiquantum well GaAs-based planar Gunn diodes. / Khalid, A.; Li, C.; Papageorgiou, V.; Pilgrim, N. J.; Dunn, G. M.; Cumming, D. R. S.

In: Microwave and Optical Technology Letters, Vol. 55, No. 3, 03.2013, p. 686-688.

Research output: Contribution to journalArticle

Khalid, A. ; Li, C. ; Papageorgiou, V. ; Pilgrim, N. J. ; Dunn, G. M. ; Cumming, D. R. S. / A 218-GHz second-harmonic multiquantum well GaAs-based planar Gunn diodes. In: Microwave and Optical Technology Letters. 2013 ; Vol. 55, No. 3. pp. 686-688.
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