Abstract
We present a multiquantum-well channel GaAs-based planar Gunn diode. By introducing extra channels, the output RF power has been significantly improved compared to single-channel GaAs-based planar Gunn diodes. For a 1.14 mu m length and 60 mu m wide device, the highest power achieved was approximately -4 dBm operating in fundamental mode at 109 GHz, and -26.6 dBm at its second harmonic at 218 GHz. The DC-to-RF conversion efficiency was similar to 0.3% for the fundamental mode of oscillation. (C) 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:686688, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27393
Original language | English |
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Pages (from-to) | 686-688 |
Number of pages | 3 |
Journal | Microwave and Optical Technology Letters |
Volume | 55 |
Issue number | 3 |
Early online date | 28 Jan 2013 |
DOIs | |
Publication status | Published - Mar 2013 |
Keywords
- semiconductor heterojunctions
- millimeter wave source
- Gunn devices
- gallium compounds