Abstract
Colossal magnetoresistance is a rare phenomenon in which the electronic resistivity of a material can be decreased by orders of magnitude upon application of a magnetic field. Such an effect could be the basis of the next generation of memory devices. Here we report CMR in the antiferromagnetic oxypnictide NdMnAsO1-xFx as a result of competition between an antiferromagnetic insulating phase and a paramagnetic semiconductor upon application of a magnetic field. Mn2+ oxypnictides are relatively unexplored, and tailored synthesis of novel compounds could result in an array of materials for further investigation and optimization.
Original language | English |
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Pages (from-to) | 8766-8769 |
Number of pages | 4 |
Journal | Journal of the American Chemical Society |
Volume | 134 |
Issue number | 21 |
DOIs | |
Publication status | Published - 30 May 2012 |
Keywords
- phase-diagram
- superconductivity
- resistivity
- systems
- earth
- metal