We present the first results of a planar Gunn diode made in In GaAs on an InP substrate, operating at a fundamental frequency up to 164 GHz. For a 120-μm-wide device with a 1.3-μm active channel length, the highest power achieved was approximately-10 dBm at 164 GHz.
- gallium and indium compounds
- Gunn devices
- millimeter-wave source
- semiconductor heterojunctions