InGaAs planar gunn diodes operating at a fundamental frequency of 164 GHz

A. Khalid, C. Li, V. Papageogiou, G. M. Dunn, M. J. Steer, I. G. Thayne, M. Kuball, C. H. Oxley, M. Montes Bajo, A. Stephen, J. Glover, D. R. S. Cumming

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Abstract

We present the first results of a planar Gunn diode made in In GaAs on an InP substrate, operating at a fundamental frequency up to 164 GHz. For a 120-μm-wide device with a 1.3-μm active channel length, the highest power achieved was approximately-10 dBm at 164 GHz.
Original languageEnglish
Pages (from-to)39-41
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number1
Early online date15 Nov 2012
DOIs
Publication statusPublished - Jan 2013

Keywords

  • gallium and indium compounds
  • Gunn devices
  • millimeter-wave source
  • semiconductor heterojunctions

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    Khalid, A., Li, C., Papageogiou, V., Dunn, G. M., Steer, M. J., Thayne, I. G., Kuball, M., Oxley, C. H., Montes Bajo, M., Stephen, A., Glover, J., & Cumming, D. R. S. (2013). InGaAs planar gunn diodes operating at a fundamental frequency of 164 GHz. IEEE Electron Device Letters, 34(1), 39-41. https://doi.org/10.1109/LED.2012.2224841