InGaAs planar gunn diodes operating at a fundamental frequency of 164 GHz

A. Khalid; C. Li; V. Papageogiou; G. M. Dunn; M. J. Steer; I. G. Thayne; M. Kuball; C. H. Oxley; M. Montes Bajo; A. Stephen; J. Glover; D. R. S. Cumming

doi:10.1109/LED.2012.2224841

InGaAs planar gunn diodes operating at a fundamental frequency of 164 GHz

A. Khalid, C. Li, V. Papageogiou, G. M. Dunn, M. J. Steer, I. G. Thayne, M. Kuball, C. H. Oxley, M. Montes Bajo, A. Stephen, J. Glover, D. R. S. Cumming

Physics

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

We present the first results of a planar Gunn diode made in In GaAs on an InP substrate, operating at a fundamental frequency up to 164 GHz. For a 120-μm-wide device with a 1.3-μm active channel length, the highest power achieved was approximately-10 dBm at 164 GHz.

Original language	English
Pages (from-to)	39-41
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	1
Early online date	15 Nov 2012
DOIs	https://doi.org/10.1109/LED.2012.2224841
Publication status	Published - Jan 2013

Keywords

gallium and indium compounds
Gunn devices
millimeter-wave source
semiconductor heterojunctions

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10.1109/LED.2012.2224841

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abstract = "We present the first results of a planar Gunn diode made in In GaAs on an InP substrate, operating at a fundamental frequency up to 164 GHz. For a 120-μm-wide device with a 1.3-μm active channel length, the highest power achieved was approximately-10 dBm at 164 GHz.",

keywords = "gallium and indium compounds, Gunn devices, millimeter-wave source, semiconductor heterojunctions",

author = "A. Khalid and C. Li and V. Papageogiou and Dunn, {G. M.} and Steer, {M. J.} and Thayne, {I. G.} and M. Kuball and Oxley, {C. H.} and {Montes Bajo}, M. and A. Stephen and J. Glover and Cumming, {D. R. S.}",

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doi = "10.1109/LED.2012.2224841",

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AU - Khalid, A.

AU - Li, C.

AU - Papageogiou, V.

AU - Dunn, G. M.

AU - Steer, M. J.

AU - Thayne, I. G.

AU - Kuball, M.

AU - Oxley, C. H.

AU - Montes Bajo, M.

AU - Stephen, A.

AU - Glover, J.

AU - Cumming, D. R. S.

PY - 2013/1

Y1 - 2013/1

N2 - We present the first results of a planar Gunn diode made in In GaAs on an InP substrate, operating at a fundamental frequency up to 164 GHz. For a 120-μm-wide device with a 1.3-μm active channel length, the highest power achieved was approximately-10 dBm at 164 GHz.

AB - We present the first results of a planar Gunn diode made in In GaAs on an InP substrate, operating at a fundamental frequency up to 164 GHz. For a 120-μm-wide device with a 1.3-μm active channel length, the highest power achieved was approximately-10 dBm at 164 GHz.

KW - gallium and indium compounds

KW - Gunn devices

KW - millimeter-wave source

KW - semiconductor heterojunctions

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U2 - 10.1109/LED.2012.2224841

DO - 10.1109/LED.2012.2224841

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SP - 39

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 1

ER -

InGaAs planar gunn diodes operating at a fundamental frequency of 164 GHz

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Keywords

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