We present the first results of a planar Gunn diode made in In GaAs on an InP substrate, operating at a fundamental frequency up to 164 GHz. For a 120-μm-wide device with a 1.3-μm active channel length, the highest power achieved was approximately-10 dBm at 164 GHz.
- gallium and indium compounds
- Gunn devices
- millimeter-wave source
- semiconductor heterojunctions
Khalid, A., Li, C., Papageogiou, V., Dunn, G. M., Steer, M. J., Thayne, I. G., Kuball, M., Oxley, C. H., Montes Bajo, M., Stephen, A., Glover, J., & Cumming, D. R. S. (2013). InGaAs planar gunn diodes operating at a fundamental frequency of 164 GHz. IEEE Electron Device Letters, 34(1), 39-41. https://doi.org/10.1109/LED.2012.2224841