The possibility of circumventing the difficulties of fine doping control in GaN Gunn diode devices by the substitution of a fully depleted p-type doping spike for the doping notch used to promote domain formation is explored using a Monte Carlo model. The p-type doping spike is a commonly used structure, but its potential use in GaN has not been previously evaluated. The results for a functional doping spike are compared, favorably, to those for a physically reasonable doping notch. (C) 2008 American Institute of Physics.
|Number of pages||2|
|Journal||Applied Physics Letters|
|Publication status||Published - 11 Aug 2008|
- microwave-power generation
- Monte-Carlo analysis