The use of doping spikes in GaN Gunn diodes

R. F. Macpherson, G. M. Dunn

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The possibility of circumventing the difficulties of fine doping control in GaN Gunn diode devices by the substitution of a fully depleted p-type doping spike for the doping notch used to promote domain formation is explored using a Monte Carlo model. The p-type doping spike is a commonly used structure, but its potential use in GaN has not been previously evaluated. The results for a functional doping spike are compared, favorably, to those for a physically reasonable doping notch. (C) 2008 American Institute of Physics.

Original languageEnglish
Article number062103
Number of pages2
JournalApplied Physics Letters
Volume93
Issue number6
DOIs
Publication statusPublished - 11 Aug 2008

Keywords

  • microwave-power generation
  • Monte-Carlo analysis
  • devices
  • performance
  • substrate
  • transport

Cite this

The use of doping spikes in GaN Gunn diodes. / Macpherson, R. F.; Dunn, G. M.

In: Applied Physics Letters, Vol. 93, No. 6, 062103, 11.08.2008.

Research output: Contribution to journalArticle

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